Photomask, method of producing it and pattern forming method using the photomask

专利摘要:
The mask pattern formed on the transparent substrate 2 is opposite to the semi-shielding portion 3 which transmits the exposure light in phase with respect to the transmissive portion 4 and the exposure light based on the transmissive portion 4. It consists of the phase shifter 5 which permeate | transmits phase. The semi-shielding portion 3 has a transmittance for partially transmitting the exposure light. The phase shifter 5 is arrange | positioned in the position which can erase the part of the light which permeate | transmitted the light transmission part 4 and the semi-shielding part 3 by the transmitted light.
公开号:KR20040030061A
申请号:KR10-2004-7000662
申请日:2002-12-24
公开日:2004-04-08
发明作者:미사카아키오
申请人:마츠시타 덴끼 산교 가부시키가이샤；
IPC主号:

专利说明:

Photomask, Method for Creating It and Pattern Forming Method Using Photomask {PHOTOMASK, METHOD OF PRODUCING IT AND PATTERN FORMING METHOD USING THE PHOTOMASK}
[2] In recent years, miniaturization of circuit patterns is increasingly required for high integration of large-scale integrated circuit devices (hereinafter referred to as LSIs) realized by using semiconductors. As a result, miniaturization of the wiring pattern constituting the circuit or the contact hole pattern (hereinafter referred to as the contact pattern) connecting the multilayered wiring lines through the insulating layer has become very important.
[3] Hereinafter, the thinning of the wiring pattern and the miniaturization of the contact pattern by the conventional exposure system will be described using a positive resist process. Here, the line pattern is a portion of the resist film which is not exposed by exposure light, that is, a resist portion (resist pattern) remaining after development. The space pattern is a portion of the resist film that is exposed to exposure light, that is, an opening portion (resist removal pattern) from which the resist is removed by development. In addition, a contact pattern is a part remove | eliminated in a hole shape by development in a resist film, and it can be considered that it is especially a micro thing among space patterns. In the case where the negative resist process is used instead of the positive resist process, the definitions of the above-described line patterns and space patterns may be changed.
[4] <First Conventional Example>
[5] As a conventional thin line pattern forming method, a method of forming a fine line pattern by emphasizing the contrast of the light intensity distribution generated by the mask pattern with a phase shifter has been proposed (for example, HY Liu et al., Proc. SPIE, Vol. 3333, P. 2 (1998).
[6] Hereinafter, a conventional line pattern forming method using a phase shifter will be described with reference to the drawings.
[7] FIG. 28A shows an example of a desired pattern (resist pattern) arrangement to be formed. As shown in FIG. 28A, the pattern 800 has a partial pattern 800a having a predetermined size or less.
[8] Two conventional photomask top views to be used for forming the patterns shown in FIGS. 28B and 28C are shown. As shown in FIG. 28B, in the first photomask 810, a complete light shielding film 812 (transmittance of exposure light is almost 0%) is formed on the transparent substrate 811. Further, in the complete light shielding film 812, a first opening portion 813 to be a light transmitting portion and a second opening portion 814 to be a phase shifter are formed along the light shielding pattern 812a for forming the partial pattern 800a. The second opening portion 814 to be the phase shifter transmits the exposure light so that a phase difference of 180 degrees occurs with respect to the first opening portion 813 to be the light transmitting portion. As shown in FIG. 28C, in the second photomask 820, a desired pattern 800 is formed on the transparent substrate 821 by combining with the light shielding pattern 812a of the first photomask 810. ) (See FIG. 28A), a light shielding pattern 822 is formed.
[9] The pattern formation method using the two photomasks shown to FIG. 28 (b) and FIG. 28 (c) is as follows. First, exposure is performed to the board | substrate with which the resist film which consists of positive resists was apply | coated using the 1st photomask 810. FIG. Thereafter, the position of the second photomask 820 is adjusted so that the pattern 800 shown in FIG. 28A is formed, and then exposure is performed using the second photomask 820. Then, by developing the resist film, a resist pattern as shown in Fig. 28A can be formed. At this time, the excess pattern (other than the pattern 800) remaining only by exposure using only the first photomask 810 can be removed by exposure using the second photomask 820. As a result, it is possible to form the partial pattern 800a having a small width that cannot be formed by exposure using only the second photomask 820.
[10] In this method, when the light transmitting portion and the phase shifter are disposed with a pattern (i.e., light blocking pattern) consisting of a completely light blocking film having a predetermined size or less, the light transmitting portion and the phase shifter are transmitted through each of the light transmitting portion (opening portion) and the phase shifter and diffracted behind the light blocking pattern. Since the light hits and cancels each other, the light shielding property of the light shielding pattern can be improved, and a line pattern having a predetermined size or less can be formed.
[11] <2nd conventional example>
[12] As a conventional method for forming a micro contact pattern, a method using a halftone phase shift mask has been proposed. In this halftone phase shift mask, a light-transmitting portion (an opening in the phase shifter) corresponding to the contact pattern is formed. In addition, as the light shielding portion, a phase shifter is disposed having a low transmittance (about 3 to 6%) with respect to the exposure light and transmitting light at an opposite phase of 180 degrees with respect to the light passing through the opening.
[13] Hereinafter, the principle of the pattern formation method by a halftone phase shift mask is demonstrated, referring FIGS. 29 (a)-(g).
[14] FIG. 29A is a plan view of a photomask in which an opening corresponding to a contact pattern is formed in a chromium film to be a completely light shielding portion formed on a mask surface, and FIG. 29B is shown in FIG. The amplitude intensity of light transmitted through the photomask and transferred to a position corresponding to the line segment AA 'on the to-be-exposed material is shown. FIG. 29C is a plan view of a photomask in which a chromium film corresponding to a contact pattern is formed as a completely light shielding portion in a phase shifter formed on the mask surface, and FIG. 29D is shown in FIG. 29C. The amplitude intensity of light transmitted through the photomask and transferred to a position corresponding to the line segment AA 'on the to-be-exposed material is shown. FIG. 29E is a plan view of a photomask (ie, a halftone phase shift mask) in which an opening corresponding to a contact pattern is formed in a phase shifter to be a light shielding portion formed on a mask surface, and FIGS. Fig. 29G shows the amplitude intensity and the light intensity of light transmitted through the photomask shown in Fig. 29E, respectively, and transferred to a position corresponding to the line segment AA 'on the exposed material.
[15] As shown in FIGS. 29B, 29D, and 29F, the amplitude intensity of the light transmitted through the halftone phase shift mask shown in FIG. 29E is shown in FIG. It is the sum of the amplitude intensities of the light transmitted through the photomask shown in each of a) and FIG. 29C. That is, in the halftone phase shift mask shown in (e) of 29, the phase shifter to be the shielding portion not only transmits a part of the exposure light, but also 180 degrees of light passing through the opening to the light passing through the phase shifter. It is formed to give a phase difference. Therefore, as shown in Figs. 29B and 29D, the light passing through the phase shifter has an amplitude intensity distribution in the opposite phase with respect to the light passing through the opening, so that Fig. 29B When the amplitude intensity distribution shown and the amplitude intensity distribution shown in Fig. 29D are synthesized, as shown in Fig. 29F, a phase boundary in which the amplitude intensity becomes zero due to the phase change occurs. As a result, as shown in Fig. 29G, at the end of the opening serving as the phase boundary (hereinafter referred to as the phase end), the light intensity represented by the square of the amplitude intensity is also zero, and a strong dark portion is formed. Therefore, on the light transmitted through the halftone phase shift mask shown in Fig. 29E, very strong contrast is realized around the opening, whereby a small contrast pattern can be formed.
[16] Here, the exposure light source used for exposure in this specification is demonstrated. 30A to 30C are diagrams showing the shape of an exposure light source that has been used conventionally. With respect to the normal exposure light source as shown in FIG. 30 (a), the inclined incident exposure light source is the light component incident perpendicularly to the portion corresponding to the light source center of the photomask. The light source as shown to 30 (c) is meant. As a typical oblique incidence exposure light source, there are a ring exposure light source shown in Fig. 30B and a quadrupole exposure light source shown in Fig. 30C. Although slightly dependent on the target pattern, the quadrupole exposure light source is generally more effective in enhancing the contrast or expanding the depth of focus (DOF) than the annular exposure light source.
[17] However, in the pattern formation method similar to the first conventional example, there are the following problems.
[18] (1) In order to improve the contrast on the light shielding pattern and the light shield corresponding to the light shielding pattern by interposing the light shielding pattern between the light projecting portion and the phase shifter, the light projecting portion and the phase shifter must be adjacent at intervals of a predetermined size or less. On the other hand, when the light transmitting portion and the phase shifter are arranged on the photomask without interposing the light blocking pattern, a light blocking image corresponding to the boundary between the light transmitting portion and the phase shifter is formed. Therefore, since an arbitrary shape pattern cannot be formed only by the first photomask as shown in Fig. 28B, in order to create a pattern having a complicated shape, such as a normal LSI pattern layout, it is necessary to refer to Fig. 28B. In addition to the first photomask as shown, exposure using a second photomask as shown in FIG. 28C is essential. As a result, the mask cost increases and, due to the increase in the number of processes in the lithography, the through put decreases or the manufacturing cost increases.
[19] (2) When the desired pattern (resist pattern) to be formed is a complex pattern shape (e.g., T-shaped or less), the entire shading pattern can be formed only between the light-transmitting portion and the phase shifter which are in opposite phases. Therefore, for example, the light shielding property of the T-shaped light shielding pattern cannot be improved. Therefore, the pattern layout that can utilize the effect of the phase shifter is limited.
[20] In addition, in the pattern formation method similar to the second conventional example, there are the following problems.
[21] (3) With the halftone phase shift mask, it is difficult to carry out the formation of the isolated contact patterns arranged in isolation and the formation of the dense contact patterns densely arranged with the degree of perfection which can be simultaneously and satisfactorily achieved by exposure using the same exposure source. Similarly, the formation of the isolated line patterns arranged in isolation and the formation of the dense line patterns arranged densely are difficult to be performed simultaneously and satisfactorily by the exposure using the same exposure source. In other words, when forming an isolated contact pattern, vertical incident exposure is performed using a small light source (see (a) of FIG. 30) having an interference degree of 0.5 or less to illuminate only the vertical incident component incident perpendicularly to the mask. By doing this, contrast improvement and high depth of focus can be realized. However, if the dense contact pattern is to be formed by the vertical incident exposure, the contrast and the depth of focus are significantly deteriorated. On the other hand, in the case of forming a dense contact pattern, a light source for illuminating only the inclined incidence component which is obliquely incident on the mask, for example, performing a ring illumination in which the vertical incidence component (the illumination component from the light source center) is removed By performing oblique incidence exposure using a light source (see FIG. 30 (b)), a contrast enhancement and a high depth of focus can be realized. However, if an isolated contact pattern is to be formed by oblique incidence exposure, contrast and depth of focus are significantly deteriorated.
[22] (4) With the halftone phase shift mask, it is difficult to perform the isolation space pattern formation and the isolation line pattern formation at the same time and with satisfactory completeness. In other words, when an isolated space pattern is formed, contrast enhancement and high depth of focus can be realized by performing vertical incident exposure. However, if an isolated line pattern is to be formed by vertical incident exposure, contrast and depth of focus are significantly deteriorated. On the other hand, when the isolated line pattern is formed, contrast enhancement and high depth of focus can be realized by performing inclined incident exposure. However, if an isolated space pattern is to be formed by oblique incidence exposure, contrast and depth of focus are significantly deteriorated. As described above, when the halftone phase shift mask is used, the optimal illumination condition for the isolated space pattern (including the isolated contact pattern) and the optimal illumination condition for the dense space pattern (including the dense contact pattern) or the isolated line pattern are opposite. In a relationship. For this reason, it is difficult to simultaneously form an isolated space pattern, an isolated line pattern, or a dense space pattern under the same illumination conditions and to achieve an optimum degree of perfection.
[1] BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photomask for forming a fine pattern used in the manufacture of a semiconductor integrated circuit device, a method for preparing the same, and a pattern forming method using the photomask.
[77] BRIEF DESCRIPTION OF THE DRAWINGS The top view of the photomask using the contour emphasis method which concerns on 1st Embodiment of this invention.
[78] Figure 2 (a) to (g) is a view for explaining the principle of contour emphasis method of the present invention.
[79] 3 (a) to 3 (f) are diagrams for explaining the phase shifter size limit in the contour emphasis method of the present invention.
[80] 4A to 4D are diagrams for explaining the phase shifter size limit in the contour emphasis method of the present invention.
[81] 5 (a) to 5 (f) are views for explaining the change in contrast of the light intensity distribution in the case where the contour emphasis mask of the present invention is exposed at various light source positions to form an isolated pattern.
[82] 6 (a) to 6 (f) are diagrams for explaining the change in contrast of the light intensity distribution in the case where a dense pattern is formed by exposing the contour emphasis mask of the present invention at various light source positions.
[83] 7 (a) to 7 (e) are views for explaining the DOF improvement effect by the contour emphasis mask of the present invention.
[84] 8 (a) to 8 (f) are views for explaining contrast and DOF dependence on transmittance of the semi-shielding portion in the contour emphasis mask of the present invention.
[85] 9 (a) to 9 (f) show the deformation of the light shielding mask pattern composed of the semi-shielding portion and the phase shifter in the contour emphasis mask of the present invention in which an opening corresponding to the contact pattern is formed.
[86] FIG. 10 is a plan view of the contour emphasis mask of the present invention in which the openings corresponding to the contact patterns are densely arranged with the mask pattern of the contour emphasis mask of the present invention shown in FIG.
[87] 11 (a) and 11 (b) are diagrams for explaining the DOF dependence on the size of the opening in the contour emphasis mask of the present invention.
[88] 12 is a plan view of a photomask using a centerline emphasis method according to the first embodiment of the present invention.
[89] 13A to 13C are diagrams for explaining the principle of the center line emphasis method of the present invention.
[90] 14A and 14B are diagrams showing deformation of the phase shifter shape in the image emphasis mask of the present invention.
[91] 15 (a) to 15 (c) show DOF characteristics when exposure from various exposure light incidence directions is performed using a plurality of image emphasis masks of the present invention, each of which has different sizes of openings to be phase shifters. Also calculated by simulation.
[92] 16A and 16B are views for explaining the advantages of using a semi-shielding portion as a shielding portion constituting a mask pattern in the image emphasis mask of the present invention.
[93] Fig. 17 is a flowchart of a mask data creating method according to the third embodiment of the present invention.
[94] 18 (a) to 18 (d) are respective process charts in the case of forming a mask pattern for forming a space pattern using the mask data creation method according to the third embodiment of the present invention.
[95] 19A to 19D are respective process charts in the case of forming a mask pattern for forming a space pattern using the mask data creation method according to the third embodiment of the present invention.
[96] 20A to 20D are respective process charts in the case of forming a mask pattern for forming a line pattern by using the mask data creation method according to the third embodiment of the present invention.
[97] 21 (a) to 21 (c) are respective process charts in the case of forming a mask pattern for forming a line pattern using the mask data creating method according to the third embodiment of the present invention.
[98] Fig. 22 is a diagram showing a method of inserting a phase shifter according to the line width of a mask pattern in the mask data creating method according to the third embodiment of the present invention.
[99] 23 is a plan view of a photomask according to a fourth embodiment of the present invention.
[100] (A)-(f) are sectional views taken along the line AA 'of FIG.
[101] 25 (a) to 25 (d) are cross-sectional views showing respective steps of the pattern forming method according to the fifth embodiment of the present invention.
[102] 26 (a) to 26 (e) are diagrams for explaining the deformation compensation method for the line end portion in the mask data creation method according to the sixth embodiment of the present invention.
[103] 27 (a) to 27 (f) are views for explaining the deformation compensation method for the corner portion in the mask data creation method according to the sixth embodiment of the present invention.
[104] FIG. 28A is a diagram showing an example of a desired pattern layout to be formed in the conventional pattern forming method, and FIGS. 28B and 28C are respectively shown in FIG. 28A. Two conventional photomask top views used for forming the pattern shown.
[105] 29A to 29G are diagrams for explaining the principle of a pattern formation method using a conventional halftone phase shifter mask.
[106] FIG. 30A is a diagram showing a normal exposure light source shape, FIG. 30B is a diagram showing the shape of the annular exposure light source, and FIG. 30C shows the shape of the quadrupole exposure light source. Degree.
[23] In view of the above, it is an object of the present invention to provide a photomask capable of forming a fine pattern under the same exposure conditions, and a method of forming the same and a pattern forming method using the photomask without depending on the pattern shape or the degree of compaction. It is done.
[24] In order to achieve the above object, a photomask according to the present invention includes a mask pattern having a light shielding property against exposure light on a transmissive substrate having transparency to exposure light, and a transmissive portion having no mask pattern formed on the transmission substrate. Based on the formed photomask, the mask pattern includes a semi-shielding portion for transmitting the exposure light in phase with respect to the light-transmitting portion, and a phase shifter for transmitting the exposure light in the opposite phase with respect to the light-transmitting portion, and the semi-shielding portion is made of a furnace. It has a transmittance which partially transmits the light light, and the phase shifter is formed at a position capable of erasing a part of the light transmitted through the light transmitting portion and the semi-shielding portion by the light transmitted through the phase shifter.
[25] According to the photomask of the present invention, the mask pattern is composed of a semi-shielding portion and a phase shifter, and a phase shifter is disposed so that a part of the light passing through the light transmitting portion and the semi-shielding portion can be erased by the light transmitted through the phase shifter. Thereby, since the light intensity distribution contrast on the light shielding image corresponding to the mask pattern can be emphasized, the fine pattern can be formed under the same exposure conditions without depending on the shape or density of the pattern.
[26] In the photomask of the present invention, the transmittance of the semi-shielding portion with respect to the exposure light is preferably 15% or less.
[27] In this manner, it is possible to achieve reduction in the thickness of the resist film or optimization of the resist sensitivity during pattern formation. In particular, when the transmittance of the semi-shielding portion with respect to the exposure light is 6% or more and 15% or less, it is possible to achieve both the DOF (focus depth) or the contrast enhancement, the prevention of the reduction of the film thickness of the resist film during the pattern formation, or the optimization of the resist sensitivity.
[28] In the photomask of the present invention, the semi-shielding portion transmits the exposure light based on the light transmitting portion with a phase difference of (-30 + 360 × n) degrees or more and (30 + 360 × n) degrees or less (where n is an integer). At the same time, the phase shifter may transmit the exposure light with a phase difference of (150 + 360 × n) degrees or more and (210 + 360 × n) degrees or less (where n is an integer) based on the light transmitting portion. That is, in this specification, the phase difference of (-30 + 360 × n) degrees or more and (30 + 360 × n) degrees or less (where n is an integer) is regarded as in-phase, and is (150 + 360 × n) degrees or more. The phase difference of (210 + 360 x n) degrees or less (where n is an integer) is regarded as an opposite phase.
[29] In the photomask of the present invention, the phase shifter is disposed at a portion of (0.8 x lambda / NA) x M or less from the boundary with the light transmitting portion of the mask pattern (wherein Is the wavelength of the exposure light, and NA and M are respectively). The numerical aperture and the reduction factor of the exposure machine reduction projection optical system).
[30] This improves the exposure margin in pattern formation.
[31] In the photomask of the present invention, when the mask pattern is formed to surround the light transmitting portion, and the phase shifter is disposed near the light transmitting portion of the mask pattern, the width of the phase shifter is (0.3 x lambda / NA) x M or less (where is the wavelength of the exposure light, and NA and M are the numerical aperture and the reduction factor of the exposure machine reduction projection optical system, respectively).
[32] This improves the focus margin in pattern formation. However, it is preferable that the width of a phase shifter is (0.1x (lambda) / NA) xM or more from which the optical effect | action as a phase shifter is acquired.
[33] In the photomask of the present invention, the mask pattern is formed to surround the light transmitting portion, and the phase shifter is preferably disposed so as to be interposed by the semi-shielding portion and the light transmitting portion in the vicinity of the light transmitting portion of the mask pattern.
[34] By doing in this way, the light intensity distribution contrast in the image periphery of the light which permeate | transmitted the light transmission part can be emphasized.
[35] In the photomask of the present invention, the mask pattern is formed so as to surround the light transmitting portion, and the phase shifter is preferably disposed so as to be surrounded by the semi-shielding portion near the light transmitting portion of the mask pattern.
[36] In this way, the light intensity distribution contrast at the image periphery of the light passing through the light transmitting portion can be emphasized, and the light intensity distribution is less affected by the mask size error.
[37] In the photomask of the present invention, the mask pattern is surrounded by the light transmitting portion, and the phase shifter is preferably surrounded by the semi-shielding portion.
[38] In this way, the light intensity distribution contrast at the center of the light shielding image corresponding to the mask pattern can be emphasized. In this case, if the width of the mask pattern is (0.8 x lambda / NA) x M or less (where lambda is the wavelength of exposure light, and NA and M are the numerical aperture and reduction magnification of the exposure machine reduction projection optical system, respectively) Is surely obtained. In this case, if the width of the phase shifter is (0.4 x lambda / NA) x M or less, the exposure margin in pattern formation is further improved. In this case, if the width of the phase shifter is (0.1 x lambda / NA) x M or more and (0.4 x lambda / NA) x M or less, the exposure margin and DOF are simultaneously improved.
[39] In the photomask of the present invention, the mask pattern is a line-shaped pattern surrounded by the light transmitting portion, and the phase shifter is preferably disposed so as to be interposed by the semi-shielding portion in the center portion of the line width direction of the mask pattern.
[40] In this way, the light intensity distribution contrast at the center of the line-shaped light shielding image corresponding to the mask pattern can be emphasized. In this case, if the width of the mask pattern is (0.8 x lambda / NA) x M or less (where lambda is the wavelength of exposure light, and NA and M are the numerical aperture and reduction magnification of the exposure machine reduction projection optical system, respectively) Is surely obtained. In this case, if the width of the phase shifter is (0.4 x lambda / NA) x M or less, the exposure margin in pattern formation is further improved. In this case, if the width of the phase shifter is (0.1 x lambda / NA) x M or more and (0.4 x lambda / NA) x M or less, the exposure margin and DOF are simultaneously improved.
[41] In the photomask of the present invention, the mask pattern is a line-shaped pattern surrounded by the light transmitting portion, and the phase shifter is preferably disposed at least at both ends in the line width direction of the mask pattern via the semi-shielding portion.
[42] In this way, the light intensity distribution contrast at the contour of the light shielding image corresponding to the mask pattern can be emphasized.
[43] In the photomask of the present invention, the mask pattern is a line-shaped pattern surrounded by the light transmitting portion, and the phase shifter is preferably disposed so as to interpose the semi-shielding portions at both ends and the center portion of the mask pattern in the line width direction.
[44] In this way, the light intensity distribution contrast at the contour of the light shielding image corresponding to the mask pattern can be emphasized. Further, due to the use of the semi-shielding portion, it is possible to prevent the occurrence of side lobes in the center of the shielding image. In this case, if the width of the mask pattern is (λ / NA) x M or less (where λ is the wavelength of the exposure light, and NA and M are the numerical aperture and the reduction ratio of the exposure machine reduction projection optical system, respectively), the above-described effects are assured. You can get it. In this case, if the width of the phase shifter is (0.3 x lambda / NA) x M or less, the focus margin in pattern formation is further improved.
[45] In the photomask of the present invention, the mask pattern is a line-shaped pattern surrounded by the light transmitting portion, and the phase shifter is preferably disposed so as to be surrounded by semi-shielding portions at both ends in the line width direction of the mask pattern.
[46] In this way, the light intensity distribution contrast at the contour of the light shielding image corresponding to the mask pattern can be emphasized, and the light intensity distribution is less affected by the mask size error.
[47] In the photomask of the present invention, the mask pattern is a line-shaped pattern surrounded by the light transmitting portion, and the phase shifter is preferably disposed so as to be surrounded by semi-shielding portions at both ends and the center of the line width direction of the mask pattern, respectively.
[48] In this way, the light intensity distribution contrast at the contour of the light shielding image corresponding to the mask pattern can be emphasized, and the light intensity distribution is less affected by the mask size error. Further, due to the use of the semi-shielding portion, it is possible to prevent the occurrence of side lobes in the center of the shielding image.
[49] In the photomask of the present invention, the light transmitting portion has a first light transmitting portion and a second light transmitting portion, the mask pattern is configured to surround the first light transmitting portion and the second light transmitting portion, and the phase shifter includes the first light transmitting portion and the second light transmitting portion. It is preferably arranged in the center portion between, and the semi-shielding portion is disposed on both sides of the phase shifter.
[50] In this way, it is possible to emphasize the light intensity distribution contrast at the center of the light shielding image corresponding to the portion interposed between the pair of light transmitting portions in the mask pattern. In this case, the distance between the first and second light-transmitting portions is (0.8 x lambda / NA) x M or less (wherein Is the wavelength of exposure light, and NA and M are numerical apertures and reduction magnifications of the exposure machine reduction projection optical system, respectively). ), The above-described effects are reliably obtained. In this case, if the width of the phase shifter is (0.4 x lambda / NA) x M or less, the exposure margin in pattern formation is improved. In this case, if the width of the phase shifter is (0.1 x lambda / NA) x M or more and (0.4 x lambda / NA) x M or less, the exposure margin and DOF are simultaneously improved.
[51] The pattern formation method which concerns on this invention is assuming the pattern formation method using the photomask of this invention, The process of forming a resist film on a board | substrate, The process of irradiating exposure light to a resist film through a photomask, And developing a resist pattern irradiated with light light to form a resist pattern.
[52] According to the pattern formation method of this invention, the effect similar to the photomask of this invention can be acquired. Moreover, in the pattern formation method which concerns on this invention, it is preferable to use the oblique incident illumination method in the process of irradiating exposure light. In this way, in the light intensity distribution of the light transmitted through the photomask, the contrast between the mask pattern and the corresponding portions of the light transmitting portions is improved. In addition, the focus characteristic of the light intensity distribution is also improved. Therefore, the exposure margin and focus margin in pattern formation are improved.
[53] The first mask data creation method according to the present invention assumes the mask data creation method of the photomask of the present invention, and determines the shape of the mask pattern based on the pattern to be formed using the photomask, and at the same time, A first step of setting the transmittance, a second step of extracting an area interposed on the light transmitting part to a predetermined size or less of the mask pattern after the first step, and a light transmitting part in the extracted area and the mask pattern after the second step A third step of inserting a phase shifter in the vicinity is provided.
[54] According to the first mask data creation method, it is possible to emphasize the light intensity distribution contrast at the image periphery of the light transmitted through the light-transmitting portion, and to realize a photomask capable of preventing side lobe generation at the center of the light-shielding image.
[55] In the first mask data creation method, it is preferable to include a step of inserting a semi-shielding portion having a predetermined size or less between the phase shifter and the light transmitting portion after the third step.
[56] In this way, it is possible to realize a photomask in which the light intensity distribution is hardly affected by the mask size error.
[57] In the first mask data generating method, after the third step, another phase shifter for transmitting the exposure light in the opposite phase on the basis of the light transmitting portion is inserted in a region interposed on the light transmitting portion with a predetermined size or less in the mask pattern. It is preferable to provide a process.
[58] In this way, a photomask capable of preventing side lobe generation can be realized. At this time, the other phase shifter may transmit the exposure light with a phase difference of (150 + 360 × n) or more and (210 + 360 × n) or less (where n is an integer) based on the light transmitting portion.
[59] In the first mask data creation method, after the third step, a line-shaped pattern end portion having a width of a predetermined size or less is extracted from the mask pattern, and the edge portion parallel to the line direction at the extracted pattern end portion is extracted. It is preferable to include the process of inserting a phase shifter.
[60] In this way, a photomask capable of preventing the retraction of the end portion of the line pattern can be realized. When the line pattern is close to another pattern, a photomask that can prevent the bridge between the patterns can be realized.
[61] In the first mask data generating method, when the corner is extracted from the mask pattern after the third step, and the phase shifter is arranged in an area within a predetermined size from the bending point of the corner extracted from the mask pattern, the phase shifter is used. It is preferable to have a process of substituting the semi-shielding portion or reducing the size of the phase shifter.
[62] By doing in this way, the photomask which can form the pattern corner part which has a desired shape can be implement | achieved.
[63] In the first mask data creation method, after the third step, it is preferable to include a step of correcting the size of the semi-shielding portion with the phase shifter size fixed so that the pattern to be formed using the photomask has a desired size. Do.
[64] In this way, a photomask capable of forming a pattern having a small variation in the size of the pattern (resist pattern) for changing the mask size, that is, a pattern having a desired size, can be realized.
[65] The second mask data creation method according to the present invention assumes the mask data creation method of the photomask of the present invention, and determines the shape of the mask pattern based on the pattern to be formed using the photomask, A first step of setting the transmittance, a second step of extracting a region in which the width of the mask pattern is less than or equal to a predetermined size after the first step, a region extracted after the second process, and a width of the mask pattern exceeds a predetermined size And a third step of inserting a phase shifter at the periphery of the region.
[66] According to the second mask data creation method, it is possible to emphasize the light intensity distribution contrast in the center of the light shielding image corresponding to the portion having the small width of the mask pattern and the contour portion of the light shielding image corresponding to the portion having the large width of the mask pattern. The photomask can be realized.
[67] In the second mask data creation method, it is preferable to include a step of inserting a semi-shielding portion having a predetermined size or less between the phase shifter and the light transmitting portion after the third step.
[68] In this way, it is possible to realize a photomask in which the light intensity distribution is less affected by the mask size error.
[69] A method of creating a second mask data, comprising: inserting another phase shifter for transmitting exposure light in an opposite phase on the basis of a light transmitting portion in a region where a width of a mask pattern exceeds a predetermined size after the third step; It is preferable.
[70] In this way, a photomask capable of preventing side lobe generation can be realized. At this time, the other phase shifter may transmit the exposure light with a phase difference of (150 + 360 × n) degrees or more and (210 + 360 × n) degrees or less (where n is an integer) based on the light transmitting portion.
[71] In the second mask data creation method, after the third step, a line-shaped pattern end portion having a width of a predetermined size or less is extracted from the mask pattern, and the edge portion parallel to the line direction at the extracted pattern end portion is extracted. It is preferable to include the process of inserting a phase shifter.
[72] In this way, a photomask capable of preventing the retraction of the end portion of the line pattern can be realized. When the line pattern is close to another pattern, a photomask that can prevent the bridge between the patterns can be realized.
[73] In the second mask data creation method, after the third step, when the corner is extracted from the mask pattern, and the phase shifter is arranged in an area within a predetermined size from the bending point of the corner extracted from the mask pattern, this phase shifter It is preferable to have a process of substituting the semi-shielding portion or reducing the size of the phase shifter.
[74] By doing in this way, the photomask which can form the pattern corner part which has a desired shape can be implement | achieved.
[75] In the method for creating the second mask data, it is preferable to include the step of correcting the size of the semi-shielding portion in a state where the phase shifter size is fixed so that the pattern to be formed using the photomask has a desired size after the third step. Do.
[76] In this way, a photomask capable of forming a pattern having a small variation in the size of the pattern (resist pattern) for changing the mask size, that is, a pattern having a desired size, can be realized.
[107] (1st embodiment)
[108] First, in realizing the present invention, a method of improving the resolution by a photomask, specifically, a photomask using a "contour enhancement method" for improving the resolution of an isolated space pattern will be described.
[109] BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view of a photomask (hereinafter referred to as a contour emphasis mask) using the contour emphasis method according to the first embodiment of the present invention, specifically, a contour emphasis mask in which a light transmissive portion corresponding to an isolated contact pattern is formed.
[110] As shown in Fig. 1, the contour emphasis mask 1 is formed on a transmissive substrate 2 having transparency to exposure light and a principal surface of the transmissive substrate 2 having a transmittance for partially transmitting the exposure light. A light-transmitting portion (opening portion) 4 formed to surround the light portion 3, the semi-shielding portion 3 on the main surface of the transparent substrate 2, and corresponding to the isolated contact pattern, and the semi-shielding portion 3 on the main surface of the transparent substrate 2 And an annular phase shifter 5 formed between the light transmitting portion 4 and the light transmitting portion 4 to surround the light transmitting portion 4. In the contour emphasis mask 1, a semi-shielding portion 3 for transmitting exposure light in phase with respect to the light transmitting portion 4, and a phase shifter 5 for transmitting exposure light in an opposite phase with respect to the light transmitting portion 4 as a reference. ), A mask pattern having light blocking properties is formed.
[111] In the present specification, the phase difference of (-30 + 360 × n) degrees or more and (30 + 360 × n) degrees or less (where n is an integer) is regarded as in-phase, and is (150 + 360 × n) degrees or more. The phase difference of (210 + 360 x n) degrees or less (where n is an integer) is regarded as an opposite phase.
[112] Moreover, the transmittance | permeability of the semi-shielding part 3 with respect to exposure light is 15% or less, Preferably they are 6% or more and 15% or less. As the material of the semi-shielding portion 3, for example, a thin film made of a metal such as Cr (chromium), Ta (tantalum), Zr (zirconium) or Mo (molybdenum) or an alloy of these metals (thickness of 50 nm or less) Can be used. Specific examples of the alloy include Ta-Cr alloy, Zr-Si alloy, Mo-Si alloy, and the like. In addition, when increasing the thickness of the semi-shielding portion 3, a material containing an oxide such as ZrSiO, Cr-Al-O, TaSiO or MoSiO may be used.
[113] Moreover, the transmittance | permeability of the phase shifter 5 with respect to exposure light is higher than the transmittance | permeability of the semi-shielding part 3, and is equal to or less than the transmittance | permeability of the light transmissive part 4.
[114] <Principle of Contour Emphasis>
[115] Next, the case where a contact pattern is formed by a positive resist process is demonstrated as an example about the "contour enhancement method" for improving the resolution of an isolated space pattern used by this embodiment. Here, the "contour enhancement method" is a principle that is equally established regardless of the shape of the micro space pattern in the positive resist process. In addition, the "contour enhancement method" can be similarly applied in the case of using a negative resist process in consideration of substituting the micro pattern (resist pattern) for the micro space pattern (resist removal pattern) in the positive resist process.
[116] 2 (a) to 2 (g) are diagrams for explaining the principle for emphasizing the transfer image of light in the contact pattern formation region.
[117] FIG. 2A is a plan view of a photomask in which an opening corresponding to a contact pattern is formed in a semi-shielding portion formed on a surface of a transparent substrate and having a transmittance for transmitting a part of exposure light. FIG. 2B shows the amplitude intensity of light transmitted through the photomask shown in FIG. 2A and transferred to a position corresponding to the line segment AA 'on the to-be-exposed material.
[118] FIG. 2C is a plan view of a photomask in which an annular phase shifter is disposed in a fully shielded portion formed on the main surface of the transparent substrate so as to correspond to the peripheral region of the opening shown in FIG. FIG. 2 (d) shows the amplitude intensity of light transmitted through the photomask shown in FIG. 2 (c) and transferred to a position corresponding to the line segment AA ′ on the to-be-exposed material. Here, the amplitude intensity of the light shown in Fig. 2 (d) is in the opposite phase to the amplitude intensity of the light shown in Fig. 2 (b) because the light is transmitted through the phase shifter.
[119] FIG. 2E is an example of the contour emphasis mask according to the present embodiment, and an opening corresponding to the contact pattern similar to the photomask shown in FIG. 2A is formed in the semi-shielding portion formed on the translucent substrate main surface. Moreover, it is a top view of the photomask by which the annular phase shifter similar to the photomask shown in FIG.2 (c) is arrange | positioned at the opening peripheral area. 2 (f) and 2 (g) show the amplitude intensity and the light intensity (light intensity) of the light transmitted through the photomask shown in FIG. 2 (e) and transferred to a position corresponding to the line segment AA 'on the exposed material. Power of amplitude strength).
[120] Hereinafter, the principle in which the transfer image of the light transmitted through the contour emphasis mask shown in FIG. 2E is emphasized will be described. The structure of the photomask shown in FIG. 2E is a structure in which the semi-shielding portion of FIG. 2A and the phase shifter of FIG. 2C are superimposed on the transparent substrate. As shown in Fig. 2B, Fig. 2D and Fig. 2F, the amplitude intensities of the light transmitted through the photomask shown in Fig. 2E are shown in Figs. It becomes a distribution of the expression which superimposed the amplitude intensity of the light which permeate | transmitted the photomask shown in FIG. As can be seen from FIG. 2 (f), in the photomask shown in FIG. 2 (e), the light transmitted through the phase shifter disposed around the opening portion erases a part of the light passing through the opening portion and the semi-shielding portion. You can. Therefore, in the photomask shown in Fig. 2E, when the intensity of the light passing through the phase shifter is adjusted so that the light of the contour portion surrounding the opening is cancelled, as shown in Fig. 2G, the light corresponding to the periphery of the opening is shown. It is possible to form a light intensity distribution whose intensity is reduced to almost zero.
[121] In the photomask shown in Fig. 2E, the light passing through the phase shifter strongly cancels light around the opening, while weakly lighting near the center of the opening. As a result, as shown in Fig. 2G, in the light transmitted through the photomask shown in Fig. 2E, the inclination of the light intensity distribution profile that changes from the opening toward the peripheral portion is also increased. Lose. Therefore, since the intensity distribution of the light transmitted through the photomask shown in Fig. 2E has a sharp profile, an image having a high contrast light intensity is formed.
[122] The above is the principle which emphasizes the image (image) of light intensity in this invention. That is, by arranging the phase shifter along the contour of the mask opening formed by using the semi-shielding portion having a transmittance for transmitting a part of the exposure light, the opening in the image of the light intensity formed by the photomask shown in FIG. It is possible to form a very strong dark portion corresponding to the contour of. This makes it possible to form a light intensity distribution in which contrast is emphasized between the light intensity of the opening and the light intensity of the contour portion thereof. In the present specification, a method for performing image emphasis based on such a principle is referred to as "contour enhancement method", and a photomask which realizes this principle is referred to as "contour enhancement mask".
[123] Here, the difference between the outline enhancement method, which is the basic principle of the present invention, and the principle by the conventional halftone phase shift mask will be described. Most important in the principle of the contour enhancement method is that a part of the light passing through the semi-shielding portion and the opening portion is erased by the light passing through the phase shifter, thereby forming a dark portion in the light intensity distribution. In other words, the phase shifter behaves like an opacity pattern. Therefore, as can be seen in Fig. 2 (f), also in the amplitude intensity of the light transmitted through the contour emphasis mask, the dark portion is formed by the intensity change in the same phase side. Only in this state, the contrast can be improved by the oblique incident exposure.
[124] On the other hand, even in the light intensity distribution when the conventional halftone phase shift mask having an opening corresponding to the contact pattern is exposed, as shown in Fig. 29G, a strong dark portion is formed around the opening. However, in comparison with FIG. 29 (f) which shows the optical amplitude intensity when the conventional halftone phase shift mask is exposed and FIG. 2 (f) which shows the optical amplitude intensity when the outline emphasis mask is exposed, There is a clear difference. That is, as shown in (f) of FIG. 29, in the amplitude intensity distribution when the halftone phase shift mask is exposed, a phase boundary exists, and as shown in (g) of FIG. The upper end generates a dark portion of the light intensity distribution, thereby realizing image emphasis. In order to form the dark part by the phase phase and to obtain the effect of contrast enhancement, the component of the light which is incident perpendicularly to the photomask is required. In other words, even when a phase boundary occurs in oblique incidence exposure, dark portions due to the phase ends are not formed, and as a result, contrast enhancement effect cannot be obtained. This is the reason why the contrast enhancement effect does not occur even when the oblique incidence exposure is performed on the halftone phase shift mask. Therefore, the halftone phase shift mask should be exposed using a small light source with low interference. On the other hand, as shown in Fig. 2 (f), since the phase boundary does not occur in the amplitude intensity distribution when the contour emphasis mask is exposed, the transfer image of light necessary for forming the fine isolated space pattern is also formed by the oblique incident exposure component. It can form with high contrast.
[125] Optimization of phase shifter width in contour enhancement mask
[126] Next, in the contour emphasis method, before showing in detail that a high contrast is obtained by the oblique incidence exposure component, even if the contour emphasis mask structure as shown in Fig. 2E is too large, the width of the phase shifter becomes too large. Let's explain why we can't get.
[127] FIG. 3A illustrates an opening corresponding to a contact pattern and a small phase shifter positioned in a region surrounding the opening, wherein the semi-shielding portion is formed on the transmissive substrate main surface and has a transmittance for transmitting a part of the exposure light. It is a top view of the contour emphasis mask arrange | positioned. Fig. 3B shows the calculation result of the light intensity distribution corresponding to the line segment AA 'when the contour emphasis mask shown in Fig. 3A is exposed using a light source having a small interference degree sigma = 0.4. Fig. 3C shows the calculation result of the light intensity distribution corresponding to the line segment AA 'when the contour emphasis mask shown in Fig. 3A is exposed using the annular illumination.
[128] 3D illustrates an opening corresponding to the contact pattern and a large phase shifter positioned in an area surrounding the opening, wherein the semi-shielding portion is formed on the transmissive substrate main surface and has a transmittance for transmitting a part of the exposure light. It is a top view of the contour emphasis mask arrange | positioned. 3E shows calculation results of light intensity distributions corresponding to line segment AA 'when the contour emphasis mask shown in FIG. 3D is exposed using a light source having a small interference intensity sigma = 0.4. Fig. 3 (f) shows the calculation result of the light intensity distribution corresponding to the line segment AA 'when the contour emphasis mask shown in Fig. 3 (d) is exposed using the annular illumination.
[129] Here, it is assumed that the phase shifter width of the contour emphasis mask shown in FIG. 3D is set so large that the principle of the contour emphasis method is not established. Specifically, the openings shown in Figs. 3A and 3D are all 220 nm in all directions, and the width of the phase shifter shown in Fig. 3A is 60 nm, and in Fig. 3D. The phase shifter width shown is 150 nm. As the ring illumination, a ring ring exposure light source as shown in Fig. 30B is used, specifically, 2/3 bands having an outer diameter Of 0.75 and an inner diameter Of 0.5. As exposure conditions, light source wavelength lambda = 193 nm (ArF light source) and numerical aperture NA = 0.6 are used. In addition, the transmittance of the phase shifter is 6%. Here, in the following description, unless otherwise specified, light intensity is shown by the relative light intensity when the light intensity of exposure light is set to one.
[130] As shown in (b) and (c) of FIG. 3, when using the contour emphasis mask shown in FIG. 3A, in which the principle of the contour enhancement method is established, the dark portion caused by the opacity of the phase shifter is a kind of light source. At the same time, the contrast in the light intensity distribution was higher by ring illumination.
[131] On the other hand, when the contour emphasis mask shown in Fig. 3D, in which the phase shifter is too large, the light passing through the phase shifter becomes too strong, so that the intensity distribution of the opposite phase is formed in the amplitude intensity distribution. In such a situation, the same principle as the halftone phase shifter mask works. As a result, as shown in (e) and (f) of FIG. 3, in the light intensity distribution at the time of exposure with a small light source, a dark portion formed by the phase end is formed, resulting in a contrast enhancement effect and an inclined incident exposure. In the light intensity distribution at the time of implementation, the dark part by a phase end is not formed, and an image with very bad contrast is formed.
[132] That is, in order to realize the contour enhancement method, not only the phase shifter is disposed around the opening surrounded by the semi-shielding portion in the mask structure, but also the light transmitted through the phase shifter needs to be limited. On the latter side, according to the principle mechanism, the light passing through the phase shifter has an intensity that is greater than that of the light passing through the semi-shielding portion and the opening, and the anti-phase intensity distribution above a certain size is not formed in the amplitude intensity distribution. Means that.
[133] In order to actually limit the light passing through the phase shifter, a method of setting a condition (specifically, an upper limit) in the width according to the transmittance of the phase shifter can be used. Hereinafter, the conditions will be described using the results (refer to (a) to (d) of FIG. 4) considering the conditions for erasing light from around the phase shifter in accordance with the light passing through the phase shifter.
[134] As shown in Fig. 4A, a mask pattern on a material to be exposed in exposure using a photomask (phase shift mask) in which a phase shifter having a transmittance T and a line width L is disposed on a transparent substrate. The light intensity generated at a position corresponding to the center is set to Ih (L, T). In addition, as shown in Fig. 4B, in the exposure using a photomask (light shielding mask) in which a complete light shielding film is disposed instead of the phase shifter of the phase shift mask, it occurs at a position corresponding to the center of the mask pattern on the to-be-exposed material. Let light intensity be Ic (L). As shown in Fig. 4C, a photomask (transmission mask) in which an ordinary light transmitting portion (opening portion) is disposed in place of the phase shifter of the phase shift mask, and a light blocking portion made of a completely light blocking film is disposed in place of the light transmitting portion of the phase shift mask. ), The light intensity generated at a position corresponding to the center of the mask pattern on the material to be exposed is set to Io (L).
[135] 4D shows light intensity Ih when the transmittance T of the phase shifter and the line width L of the mask pattern are variously changed in the exposure using the phase shift mask shown in FIG. 4A. L, T)) The simulation result shows the aspect which the transmittance | permeability T and the line | wire width L were taken on the vertical axis | shaft and the horizontal axis, respectively, and represented by the contour of light intensity. Here, the graph showing the relationship of T = Ic (L) / Io (L) is overlapped. Moreover, simulation conditions are wavelength (lambda) = 0.193 micrometer (ArF light source) of exposure light, projection optical system numerical aperture NA = 0.6 of an exposure machine, and interference degree (sigma) = 0.8 (normal light source) of an exposure light source.
[136] As shown in Fig. 4D, the condition that the light intensity Ih (L, T) is minimized can be represented by the relationship of T = Ic (L) / Io (L). This physically represents a balanced relationship between TxIo (L) representing the light intensity of light passing through the phase shifter and light intensity Ic (L) of light passing outside the phase shifter. Therefore, the phase shifter width L in which the light transmitted through the phase shifter passes and the amplitude intensity of the opposite phase appears in the amplitude intensity distribution is the width L in which T x Io (L) becomes larger than Ic (L).
[137] Although there are some differences depending on the type of light source, the width (L) when the light transmitted inside the phase shifter with transmittance 1 is balanced with the light passing outside the phase shifter is 0.3 × lambda (light source wavelength) / NA (opening). Number) (about 100 nm in the case of Fig. 4D) was obtained empirically from various simulation results. In addition, as can be seen in FIG. 4 (d), in order to prevent excessive transmission of light in the phase shifter having a transmittance of 6% or more, the width (L) of the phase shifter having a transmittance of 1 (100%) is increased. ) Needs to be 2 times or less. That is, in order to prevent excessive transmission of light in the phase shifter having a transmittance of 6% or more, the upper limit of the phase shifter width L should be 0.6 x lambda / NA or less.
[138] If the above considerations correspond to the contour emphasis mask, only one side of the phase shifter needs to be considered as light that passes outside the phase shifter in the contour emphasis mask, so the upper limit of the phase shifter width L of the contour emphasis mask is described above. Think of it as half the upper limit of your consideration. Therefore, the upper limit of the phase shifter width L in the contour emphasis mask is 0.3 x lambda / NA or less when the phase shifter transmittance is 6% or more. However, this is not a sufficient condition, and if the transmittance of the phase shifter is higher than 6%, it is necessary to make the upper limit of the phase shifter width L smaller than 0.3 x lambda / NA. It is preferable that the width L of the phase shifter is 0.1 x lambda / NA or more from which an optical action as the phase shifter is obtained.
[139] In the present specification, unless otherwise specified, various mask sizes, such as phase shifter width, are expressed in terms of the size on the to-be-exposed material, and the actual mask size is reduced in terms of the reduced size of the exposure machine reduction projection optical system ( It can be found simply by multiplying by M).
[140] <Contrast based on the combination of contour emphasis mask and oblique incident exposure>
[141] Next, the image emphasis is realized by the oblique incident exposure in the contour emphasis mask in detail based on the light intensity distribution contrast change when the contour emphasis mask is exposed from various light source positions.
[142] 5A is a plan view of an example of the outline emphasis mask. Here, the transmittance of the semi-shielding portion is 7.5%, and the phase shifter and the opening portion transmittance are 100%. The opening size (equivalent on the exposed wafer) is 200 nm in all directions, and the phase shifter width is 50 nm.
[143] FIG. 5C is a line segment AA in FIG. 5A when the contour emphasis mask shown in FIG. 5A is exposed to a point light source at various light source positions normalized by the numerical aperture NA. 'And the light intensity distribution corresponding to' are calculated by optical simulation, and the light intensity Io at the position corresponding to the center of the opening of this calculation result (for example, the light intensity distribution as shown in Fig. 5B) is calculated. The light intensity Io is read and plotted against each light source position. Here, simulation results by optical calculation are shown with a light source wavelength lambda of 193 nm (ArF light source) and a numerical aperture NA of 0.6. In the following description, unless otherwise specified, it is calculated under the condition of wavelength lambda = 193 nm (ArF light source) and numerical aperture NA = 0.6 in the optical simulation.
[144] As shown in Fig. 5C, the light intensity Io at the center of the opening increases as the light source is exposed to the point light source at the outside light source position (the light source position far from the origin of Fig. 5C). In other words, it can be seen that the contrast becomes stronger as the oblique incident component is exposed to a strong light source. It demonstrates concretely, referring drawings. 5D, 5E, and 5F are points of FIG. 5A when a point light source is located at each of the sample points P1, P2, and P3 shown in FIG. 5C. Plots the light intensity distribution corresponding to the line segment AA 'of. As shown in Figs. 5D, 5E, and 5F, as the position of the point light source is shifted outward, in other words, as a large inclined incident position is formed, a high contrast image is formed. do.
[145] As can be seen from the above results, the contour enhancement mask enables contrast enhancement of light intensity distribution due to oblique incidence exposure in formation of a small isolated space pattern such as a contact pattern, which has not been realized in the conventional halftone phase mask. You can do it.
[146] Next, the dependence of the light intensity distribution contrast on the light source position when exposure is performed at various light source positions with respect to the outline-strength mask having a plurality of openings corresponding to the dense contact pattern will be described.
[147] FIG. 6A is a plan view of an example of an outline emphasis mask in which a plurality of openings are formed. The transmittance of the semi-shielding portion is 7.5%, and the transmittance of the phase shifter and the opening portion is 100%. As shown in Fig. 6A, in the outline emphasis mask in which the openings are densely arranged through the phase shifter, the phase shifter disposed around the one opening is arranged around the opening adjacent to the one opening. Combined with. In addition, the size of each opening (equivalent to the exposed wafer phase) is 200 nm on all sides, and the repetition period (equivalent to the exposed wafer phase) of each opening is 270 nm. Therefore, the width of the phase shifter (in terms of the exposed wafer phase) is 70 nm.
[148] Fig. 6C shows the line segment AA 'of Fig. 6A in the case where the contour emphasis mask shown in Fig. 6A is exposed from point light sources at various light source positions normalized to the numerical aperture NA. The corresponding light intensity distribution is calculated by optical simulation, and the light intensity (Io) at the position corresponding to the center of one opening part in this calculation result (for example, the light intensity distribution as shown in Fig. 6B). Is read, and the light intensity (Io) is plotted against each light source position.
[149] As shown in FIG. 6C, the distribution of the light intensity Io at the center of the opening for each light source position does not change concentrically, but the shape of the light intensity Io varies depending on the repetition period of the opening. On the other hand, there is basically a region with the highest contrast at the outer light source position. In the case of the light intensity Io distribution shown in FIG. 6C, light incident from an inclined position in the 45 degree direction with respect to the arrangement direction of a mask pattern called a quadrupole exposure light source as shown in FIG. 30C. The best contrast is obtained. 6 (d), 6 (e) and 6 (f) show a point light source located at each of the sample points P1, P2 and P3 shown in FIG. 6 (c), The light intensity distribution corresponding to the line segment AA 'in Fig. 6A is plotted. As shown in Figs. 6D, 6E, and 6F, as the position of the point light source becomes outward, in other words, as the position of the large inclined incident light source becomes different, the contrast of high contrast is different. Is formed.
[150] As can be seen from the above results, in the contour emphasis mask, even when the dense contact pattern is formed, the highest contrast can be realized on the respective light intensity distributions as in the case of forming the isolated contact pattern. The light source position on the side. Therefore, it can be seen that by performing oblique incidence exposure to the contour emphasis mask, an isolated contact pattern and a dense contact pattern can be simultaneously formed while emphasizing the contrast in the light intensity distribution.
[151] Depth of Focus in Contour Emphasis Mask
[152] Next, the focus depth DOF is increased in the light intensity distribution formed by the contour emphasis mask. In the contour enhancement mask, both the DOF increase effect by using the semi-shielding portion and the DOF increase effect by the phase shifter assist are combined to dramatically increase the DOF.
[153] Hereinafter, conventional chromium is used as a result of simulating the defocus (focal blur) dependence, that is, the DOF characteristic, of the pattern complete dimension (CD) when the contact pattern is formed using the contour emphasis mask of the present invention. A description will be given as compared with the case where a mask, a halftone mask, and a halftone phase shift mask are used, respectively.
[154] FIG. 7A shows the outline emphasis of the semi-shielding portion formed on the main surface of the transparent substrate, with an opening (width W) corresponding to the contact pattern and a phase shifter (width d) positioned in an area surrounding the opening. Top view of the mask. FIG. 7B is a plan view of a chrome mask in which an opening (width W) corresponding to a contact pattern is formed in a chromium film to be a fully shielded portion formed on the main surface of a transparent substrate. 7C is a plan view of a halftone mask in which an opening (width W) corresponding to a contact pattern is formed in the semi-shielding portion formed on the main surface of the transparent substrate. FIG. 7D is a plan view of a halftone phase shift mask in which an opening (width W) corresponding to a contact pattern is formed in a phase shifter to be a light shielding portion formed on a main surface of a transparent substrate. Here, the mask sizes such as the width W and the width d are each contact pattern formed by exposure in the best focus state using the respective masks shown in FIGS. 7A to 7D. It is assumed that the size of is adjusted to be the same at the same exposure dose (specifically 0.12 m).
[155] FIG. 7E shows the DOF characteristic of exposure using each mask shown in FIGS. 7A to 7D. In the optical simulation, quadrupole exposure, which is an oblique incident exposure, is used. The focus position in the highest focus state is set to 0 µm as a reference. As shown in FIG. 7E, the DOF characteristic of the halftone mask is improved compared to the DOF characteristic of the chrome mask, and the DOF characteristic of the contour emphasis mask is further improved as compared to the DOF characteristic of the halftone mask. The DOF characteristic of the halftone phase shift mask is worse than that of the chrome mask.
[156] As can be seen from the above results, the DOF characteristic of the contour emphasis mask is further improved than the DOF characteristics of all the conventional chrome masks, halftone masks and halftone phase shift masks.
[157] <Transmission Dependence of Semi-Blinding Section of Contour Highlight Mask>
[158] So far, the contrast and the DOF have been improved by the contour emphasis mask, but the contrast and DOF dependence on the semi-shielding portion transmittance of the contour emphasis mask will be described. Specifically, description will be made based on the results of simulation of various margins of pattern formation using the contour emphasis mask shown in FIG. 8A (FIGS. 8B to 8F). . FIG. 8B shows the light intensity distribution formed when the exposure is performed. In FIG. 8B, values relating to various margins defined when a hole pattern having a width of 100 nm is to be formed are also shown in the figure. Specifically, the critical intensity Ith is the light intensity that the resist film is exposed to, and various margins are defined for this value. For example, if Ip is the peak value of the light intensity distribution, Ip / Ith is a value proportional to the sensitivity for photosensitizing the resist film, and a higher value is preferable. When Ib is used as the back ground strength of light passing through the semi-shielding portion, the higher the Ith / Ib, the less the thickness reduction of the resist film occurs during pattern formation, and the higher the value, the more preferable. . Generally, it is preferable that Ith / Ib value is two or more. Based on the above, each margin is demonstrated.
[159] FIG. 8C shows the result of calculating the DOF dependency on the semi-shielding portion transmittance at the time of pattern formation. The DOF is defined as the width of the focus position where the change in the completion size of the pattern can be within 10%. As shown in Fig. 8C, the higher the transmittance of the semi-shielding portion is, the better the DOF is. FIG. 8D shows the result of calculation for the peak value Ip with respect to the semi-shielding portion transmittance at the time of pattern formation. As shown in Fig. 8 (d), the higher the transmittance of the semi-shielding portion is, the more preferable the peak value Ip, i.e., the contrast is improved. As a result, in the contour emphasis mask, the higher the transmittance of the semi-shielding portion is, the more preferable. Specifically, as shown in Figs. 8C and 8D, the transmittance increases from 0% to about 6%. It is found that it is preferable to use the semi-shielding portion having a transmittance of 6% or more due to a large margin improvement.
[160] FIG. 8 (e) shows the result of calculating Ith / Ib with respect to the semi-shielding portion transmittance at the time of pattern formation. As shown in FIG. 8E, Ith / Ib decreases as the transmittance of the semi-shielding portion is higher, and it is not preferable if the transmittance of the semi-shielding portion is too high for Ith / Ib improvement. Specifically, when the transmittance of the semi-shielding portion is about 15%, Ith / Ib becomes smaller than 2. 8 (f) shows the result of calculation for Ip / Ith with respect to the semi-shielding portion transmittance at the time of pattern formation. As shown in Fig. 8 (f), Ip / Ith has a peak when the semi-shielding portion transmittance is about 15%.
[161] As described above, in the contour emphasis mask, the DOF or contrast is improved as the transmittance of the semi-shielding portion is increased, and the effect becomes more remarkable when the semi-shielding portion transmittance exceeds 6%. On the other hand, it is preferable to set the maximum value of the transmissivity of the semi-shielding portion to about 15% from the viewpoint of preventing the reduction of the film thickness of the resist film during pattern formation, or optimizing the resist sensitivity. Therefore, it can be said that the optimal value of the transmissivity of the semi-shielding portion of the contour emphasis mask is 6% or more and 15% or less.
[162] <Deformation of Outline Emphasis Mask>
[163] 9 (a) to 9 (f) are plan views showing the deformation of the light shielding mask pattern constituted by the semi-shielding portion and the phase shifter in the contour emphasis mask having an opening corresponding to the contact pattern.
[164] The outline emphasis mask 1a shown in FIG. 9A has the same structure as the outline emphasis mask shown in FIG. That is, the transmissive substrate 2a having transparency to the exposure light, the semi-shielding portion 3a formed on the transparent substrate 2a, and the opening 4a formed by opening the semi-shielding portion 3a and corresponding to the isolated contact pattern are formed. And an annular phase shifter 5a formed between the semi-shielding portion 3a and the opening 4a to surround the opening 4a.
[165] The outline emphasis mask 1b shown in FIG. 9B includes a transmissive substrate 2b having transparency to exposure light, a semi-shielding portion 3b formed on the transmissive substrate 2b, and a semi-shielding portion 3b. Is formed by opening the opening 4b corresponding to the isolated contact pattern, and has a quadrangular phase shifter portion having the same length as each side of the opening 4b, and is formed to contact each side of the opening 4b. The shifter 5b is provided. This outline emphasis mask 1b has substantially the same characteristics as the outline emphasis mask 1b in the isolation pattern formation. By the way, the mask pattern (consisting of the semi-shielding portion 3b and the phase shifter 5b) of the contour emphasis mask 1b as a basic structure has a more effective effect when the openings corresponding to the contact patterns are densely arranged. Is obtained. FIG. 10 is a plan view of the outline emphasis mask in which the openings corresponding to the contact patterns are densely arranged with the mask pattern of the outline emphasis mask 1b shown in FIG. 9B as a basic structure. In the contour emphasis mask shown in Fig. 10, the coupling between phase shifters in contact with each of the openings occurs only in two directions or less. Therefore, the situation in which the opposite phase light passing through the phase shifter becomes excessive in the coupling portions of the phase shifters is shown. You can prevent it. As a result, it is possible to prevent the peak of the light intensity (that is, side lobe) from being generated at a place other than the place corresponding to the opening of the contour emphasis mask. That is, when the contour emphasis mask (the contour emphasis mask shown in Fig. 9 (b) or Fig. 10) surrounded by the phase shifter around the opening except the diagonal portion is used, the principle of the contour enhancement method in which the opening is in an isolated state or in a dense state is established. do.
[166] The contour emphasis mask 1c shown in FIG. 9C includes a transmissive substrate 2c having transparency to exposure light, a semi-shielding portion 3c formed on the transparent substrate 2c, and a semi-shielding portion 3c. And an opening 4c corresponding to the isolated contact pattern and quadrangular phase shifters having a length shorter than the length of each side of the opening 4c, and the center and each phase shifter of each side of the opening 4c. A phase shifter 5c is formed so as to be in contact with each side of the opening portion 4c in a state where the center of the portion is positioned. In the outline emphasis mask 1c, the width (size) of the opening portion 4c is fixed and the length of each phase shifter portion of the phase shifter 5c can be adjusted to adjust the resist pattern formed after exposure. For example, as the length of each phase shifter portion of the phase shifter 5c is shortened, the size of the resist pattern is increased. Here, the lower limit for changing the length of each phase shifter portion of the phase shifter 5c in order to maintain the contour emphasis is limited to about half of the wavelength of the light source (exposure light), while only about half the amount of mask size change is patterned. Since the size does not change, adjusting the length of the phase shifter portion is a very excellent method for adjusting the pattern size.
[167] The contour emphasis mask 1d shown in FIG. 9D includes a transmissive substrate 2d having transparency to exposure light, a semi-shielding portion 3d formed on the transmissive substrate 2d, and a semi-shielding portion 3d. And a ring-shaped phase shifter 5d formed at a position that enters the opening 4d corresponding to the isolated contact pattern and enters the semi-shielding portion 3d by a predetermined size from the boundary of the semi-shielding portion 3d and the opening 4d. It is provided. The phase shifter 5d is formed by opening the semi-shielding portion 3d in an annular shape, and an annular semi-shielding portion 3d is interposed between the phase shifter 5d and the opening 4d.
[168] The contour emphasis mask 1e shown in FIG. 9E includes a transmissive substrate 2e having transparency to exposure light, a semi-shielding portion 3e formed on the transmissive substrate 2e, and a semi-shielding portion 3e. An opening 4e formed by opening a hole and corresponding to the isolated contact pattern, and a phase shifter 5e formed at a position penetrating toward the semi-shielding portion 3e by a predetermined size from the boundary between the semi-shielding portion 3e and the opening 4e. . The phase shifter 5d is composed of four phase shifter portions each having a quadrangle longer than the length of each side of the opening 4e and in contact with each other on a diagonal of the opening 4e. Here, an annular semi-shielding portion 3e is interposed between the phase shifter 5d and the opening 4e. In the outline emphasis mask 1e, by adjusting the size and arrangement of the phase shifter 5e and changing only the width (size) of the opening 4e, the resist pattern formed after exposure can be adjusted. For example, as the width of the opening 4e is increased, the dimension of the resist pattern also increases. According to the pattern size adjustment method of changing only the opening width, MEEF (Mask Error Enhancement Factor) is compared with the method of adjusting the pattern size by simultaneously scaling both the opening and the phase shifter. Can be reduced to about half.
[169] The outline emphasis mask 1f shown in FIG. 9F includes a transmissive substrate 2f having transparency to exposure light, a semi-shielding portion 3f formed on the transmissive substrate 2f, and a semi-shielding portion 3f. An opening 4f corresponding to the isolated contact pattern, and a phase shifter 5f formed at a position penetrating toward the semi-shielding portion 3f by a predetermined size from the boundary between the semi-shielding portion 3f and the opening 4f. . The phase shifter 5f has four phase shifter portions each having a quadrangle having the same length as the length of each side of the opening 4f and opposing each side of the opening 4f. The length of each phase shifter portion of the phase shifter 5f may be longer or shorter than the length of each side of the opening 4f. According to the outline emphasis mask 1f, the resist pattern can be adjusted in size similarly to the outline emphasis mask 1c shown in Fig. 9C.
[170] In the contour emphasis mask shown in Figs. 9D to 9F, the width of the semi-shielding portion between the opening portion and the phase shifter is a magnitude that can cause the interference effect of light by the phase shifter, that is, / NA (λ). Is the wavelength of the exposure light, and NA is the numerical aperture of 1/10 or less. Moreover, in the outline emphasis mask shown to Fig.9 (a)-(f), although a square is used for the shape of an opening part, it may be a polygon like a octagon, a circle, etc., for example. The shape of the phase shifter is also not limited to a continuous ring shape or a plurality of rectangles. For example, you may form a phase shifter by arranging a some square phase shifter part.
[171] Next, the dependence of the DOF improvement characteristic on the positional relationship of the opening part and the phase shifter in a contour emphasis mask is demonstrated. Fig. 11A is a plan view showing the structure of the contour emphasis mask used in the simulation for determining the relationship between the opening size (opening width) and the DOF, and Fig. 11B is a DOF dependency simulation with respect to the opening width. It is a figure which shows a result. Specifically, in the contour emphasis mask shown in Fig. 11A, an opening of width W and an annular phase shifter of width d located on the outer circumference of the opening are disposed in the semi-shielding portion covering the main surface of the transparent substrate. As a generalized structure, it is generalized and defined. FIG. 11B shows the results of simulation of the DOF characteristic when the d is fixed at 50 nm and the W is changed in the range of 170 to 280 nm in the contour emphasis mask shown in FIG. 11A. The exposure conditions of the simulation are 193 nm, NA of 0.6, and the ring light exposure source is used.
[172] As shown in Fig. 11B, when the opening width W is a value of 0.8 x lambda / NA or less, the interference effect by the phase shifter is obtained, and the DOF becomes a good value. In particular, when the opening width W is a value of 0.6 × lambda / NA or less, the DOF improvement effect is remarkable. Therefore, the positional relationship where the phase shifter is arranged at the boundary between the opening and the semi-shielding portion is the best positional relationship (exactly, the positional relationship between the opening of the contour emphasis mask and the phase shifter) for improving the DOF characteristic. In other words, in the contour emphasis mask, the phase shifter interference effect has a special DOF characteristic improvement effect according to the name at the center of the opening part, and the opening width W which reliably obtains this effect, that is, the opening width where the phase shifter interference effect is strongly generated ( W) is 0.8 x lambda / NA or less.
[173] As described above, among the shapes of the mask patterns shown in FIGS. 9A to 9F, from the viewpoint of DOF characteristic optimization, the phase shifter is disposed at the boundary between the semi-shielding portion and the opening portion of FIGS. 9A to 9C. The mask pattern shape shown in Fig. 9) is preferable. On the other hand, in order to realize the pattern size adjustment while suppressing the MEEF, the mask pattern shape shown in FIGS. desirable.
[174] In the present embodiment, a case has been described in which a space pattern to be a contact pattern is formed. However, similar effects can be obtained even when a space pattern other than the contact pattern is formed instead.
[175] Moreover, in this embodiment, the case where a light shielding mask pattern forms the space pattern using the outline emphasis mask which surrounds an opening part (light transmission part) was demonstrated. Instead of this, however, even when the line pattern is formed by using the contour emphasis mask surrounded by the opening (transmitting portion), for example, the peripheral region of the line-shaped semi-shielding portion, that is, the vicinity of the light transmitting portion of the mask pattern By arranging the phase shifter in the region, the same effect can be obtained. Also in this case, from the viewpoint of optimizing the DOF characteristic, it is preferable to adopt a mask pattern shape in which a phase shifter is arranged at the boundary between the semi-shielding portion and the light transmitting portion. On the other hand, to realize the pattern size adjustment while suppressing the MEEF, it is preferable to adopt a mask pattern shape in which the phase shifter is arranged toward the semi-shielding portion by a predetermined size from the boundary with the opening.
[176] (2nd embodiment)
[177] Next, a description will be given of a method for improving the resolution by a photomask, specifically a photomask using a "center line enhancement method" for improving the resolution of an isolated line pattern, which has been devised by the inventor of the present invention.
[178] 12 is a plan view of a photomask (hereinafter referred to as an image emphasis mask) using a center line emphasis method according to a second embodiment of the present invention, specifically an image emphasis mask for forming an isolated line pattern.
[179] As shown in Fig. 12, the image emphasis mask 6 has a transmissive substrate 7 that is transparent to the exposure light, a transmissive substrate 7 formed on the transmissive substrate 7, and has a transmittance for transmitting a part of the exposure light, and an isolated line pattern. And a semi-shielding portion 8 and a phase shifter 9 disposed in an opening in the semi-shielding portion 8. In the image emphasis mask 6, a semi-shielding portion 8 for transmitting the exposure light in phase with respect to the light transmitting portion 7 and a phase for transmitting exposure light in the opposite phase with respect to the light transmitting portion 7 as a reference. The shifter 9 constitutes a mask pattern having light shielding properties.
[180] Moreover, the transmittance | permeability of the semi-shielding part 8 with respect to exposure light is 15% or less, Preferably they are 6% or more and 15% or less. As the material of the semi-shielding portion 8, for example, a thin film (thickness of 50 nm or less) made of a metal such as Cr, Ta, Zr or Mo or an alloy of these metals can be used. Specific examples of the alloy include Ta-Cr alloys, Zr-Si alloys, and Mo-Si alloys. In addition, when the thickness of the semi-shielding portion 8 is desired to be increased, a material containing an oxide such as ZrSiO, Cr-Al-O, TaSiO, or MoSiO may be used.
[181] The transmittance of the phase shifter 9 with respect to the exposure light is higher than the transmittance of the semi-shielding portion 8 and is equal to or less than the transmittance of the transmissive portion (the portion where the mask pattern of the transparent substrate 7 is not formed).
[182] Principles of Centerline Emphasis
[183] Next, the case where a fine line pattern is formed by a positive resist process is demonstrated as an example about the "center line emphasis method" for improving the resolution of an isolated line pattern. Also in the "center line emphasis method", as in the "contour enhancement method", the basic principle is to form a dark portion in the light intensity distribution by opacity of the phase shifter to improve contrast.
[184] First, the effect of disposing the phase shifter inside the semi-shielding portion constituting the linear mask pattern will be described with reference to FIGS. 13A to 13C.
[185] 13A is a plan view of an image emphasis mask in which a phase shifter (transmission Ts) of width S is disposed inside a semi-shielding portion (transmittance Tc) constituting a line-shaped mask pattern of width L, and the image emphasis mask is shown in FIG. The light intensity of the light transmitted and transferred to the position corresponding to the line segment AA 'is also shown. Herein, the light intensity corresponding to the center of the mask pattern is represented by Ie. FIG. 13B shows a plan view of a mask on which a semi-shielding pattern composed of semi-shielding portions (transmittance Tc) having a width L is disposed, and the light intensity of light transmitted through the mask and transferred to a position corresponding to the line segment AA '. . Here, the light intensity corresponding to the center of the semi-shielding pattern is set to Ic (L). The semi-shielding portion shown in FIGS. 13A and 13B transmits light in phase with respect to the light transmitting portion. FIG. 13C is a plan view of a mask in which a phase shift pattern made of a phase shifter (transmittance Ts) of width S is disposed on a completely shielding portion covering the mask surface, and passes through the mask to correspond to the line segment AA '. The light intensity of the light transferred to the position is also shown. Here, the light intensity corresponding to the center of the phase shift pattern is set to Io (S).
[186] The image emphasis mask shown in FIG. 13A superimposes the mask structure shown in each of FIGS. 13B and 13C. Therefore, Ie (L, S) can be minimized in the relationship between L and S where Ic (L) and Io (S) are balanced, thereby realizing contrast enhancement by the image enhancement mask shown in FIG. 13 (a). have. That is, by arranging the phase shifter inside the semi-shielding portion constituting the line mask pattern, the contrast of the light intensity distribution, specifically, the contrast at the center of the mask pattern can be emphasized by the principle of the center line enhancement method.
[187] By the way, the shape of the phase shifter (opening area formed in the semi-shielding portion) of the image emphasis mask for generating the above-mentioned light intensity Io (S) need not correspond to the shape of the semi-shielding portion. 14A and 14B are plan views showing different shapes of the phase shifter in the image emphasis mask. Specifically, FIGS. 14A and 14B show phase shifters disposed in the semi-shielding portion constituting the line mask pattern, and the phase shifters shown in FIG. 14A have two rectangular patterns. The phase shifter shown in FIG. 14B is composed of five square patterns. Also with the image emphasis mask in which the phase shifter shown to FIG. 14A and FIG. 14B is arrange | positioned, the effect similar to the image emphasis mask shown in FIG. 12 can be acquired. Therefore, the phase shifter shape of the image emphasis mask can be set to any shape such as a rectangle, a square, a circle, or a polygon within the range that can be put in the semi-shielding portion. The reason is that the minute openings all have the same optical effect regardless of the shape of the opening, provided that the intensity of light passing therethrough is the same.
[188] DOF Characteristics in Image Emphasis Masks
[189] In order to clarify the effectiveness of the combination of the image emphasis mask and the oblique incidence exposure, the inventors of the present invention use a plurality of image emphasis masks having different sizes of openings to be phase shifters to perform exposure from various exposure light incident directions. The DOF (focal depth) characteristic was calculated by simulation. 15 (a) to 15 (c) show the result, and FIG. 15 (a) shows coordinates in which the exposure light incident direction is the light source coordinate (the x and y axes in the width and length directions of the linear mask pattern, respectively). (B) shows the simulation result when the exposure light incident direction is the inclined incidence from the x-axis direction and the y-axis direction of the light source coordinate, FIG. 15C shows the simulation result when the exposure light incident direction is the inclined incidence from the 45 degree direction (the direction forming the 45 degree angle with the x axis direction or the y axis direction) of the light source coordinate. Here, as the image emphasis mask, an image emphasis mask having an opening width (hereinafter referred to as an optimum opening width) adjusted so as to maximize light shielding for each exposure light incident direction, and an image emphasis having an opening width smaller than the optimum opening width A mask and an image emphasis mask having an opening width larger than the optimum opening width were used. For comparison, the DOF characteristic in the case of using a photomask (completely shielded mask) in which a completely shielding pattern having the same outer shape is disposed instead of the mask pattern of the image emphasis mask was simulated. Here, the DOF characteristic is based on how the pattern size is changed by defocus when the exposure energy is set so that the size of the pattern (resist pattern) formed corresponding to each mask pattern at the highest focus becomes 0.12 m. Is evaluated. 15A to 15C, L denotes a mask pattern width, S denotes an opening width, and the focus position (horizontal axis) 0 corresponds to the highest focus position.
[190] As shown in Fig. 15A, when the exposure light incidence direction is the incidence direction from the center direction of the light source coordinate, the DOF characteristic deteriorates as the opening width of the image emphasis mask is increased, and a full light shielding mask is used. The DOF characteristic at the time (L = 0.12 µm and S = 0 µm) (hereinafter referred to as L / S = 0.12 / 0 µm) is most excellent. On the other hand, as shown in Fig. 15B, when the exposure light incident direction is an oblique incidence from the x-axis direction or the y direction of the light source coordinate, the DOF characteristic does not depend on the width of the opening of the image emphasis mask, When used (L / S = 0.13 / 0 µm), the same DOF characteristic is obtained. However, as shown in Fig. 15C, when the incident light incidence direction is oblique incidence from the 45 degree direction of the light source coordinates, the DOF characteristic is improved by increasing the opening width of the image enhancement mask, and a full light shielding mask is used. (L / S = 0.15 / 0 탆), the DOF characteristic is the lowest. That is, in order to improve the defocus characteristic of the light intensity distribution generated by the interference between the mask pattern diffracted light and the mask pattern transmitted light at an oblique incidence from the 45 degree direction, the mask pattern is provided in a range that can realize the minimum effective light shielding required. It can be seen that the transmitted light (that is, the phase shifter arrangement region) should be increased as much as possible.
[191] Next, the position of the phase shifter arrangement in the image emphasis mask will be described. FIG. 16A shows a plan view of a photomask on which a semi-shielding pattern having a width L made of a semi-shielding portion is formed, and the light intensity of light transmitted through the mask and transferred to a position corresponding to the line segment AA '. When the phase shifter is placed inside such a semi-shielding pattern to produce an image mask, as the width L of the semi-shielding pattern increases, the width of the phase shifter capable of realizing the maximum contrast decreases. However, as shown in Fig. 16A, even when the semi-shielding pattern has a wide width, the light intensity corresponding to the center of the semi-shielding pattern does not become zero, and there is always a residual light intensity. Therefore, when the semi-shielding portion is used as the light-shielding portion constituting the mask pattern in the image emphasis mask, as shown in FIG. 16B, the width of the phase shifter becomes smaller as the width L of the semi-shielding portion increases. No matter how large the width L of the semi-shielding portion is, it is necessary to arrange the phase shifter which is in balance with the above-described residual light intensity. Therefore, by setting the minimum size of the phase shifter that can be formed on the mask in accordance with the residual light intensity, all the phase shifters necessary for realizing the image emphasis mask can be formed. However, it is necessary to determine the transmittance of the semi-shielding portion so that the residual light intensity is such that the resist film will not be exposed to light in actual exposure.
[192] (Third embodiment)
[193] EMBODIMENT OF THE INVENTION Hereinafter, the photomask which concerns on 3rd Embodiment of this invention, and its mask data creation method is demonstrated, referring drawings.
[194] Fig. 17 shows a method of creating a mask data based on a desired pattern to be formed using a mask data creation method according to the third embodiment, specifically, using a photomask, using the contour enhancement method and the center line enhancement method. The flow chart is shown. 18A to 18D and 19A to 19D show respective steps in forming a mask pattern for forming a space pattern using the mask data creation method shown in FIG. 17. It is also. 20A to 20D and 21A to 21C show respective steps when forming a mask pattern for forming a line pattern using the mask data creation method shown in FIG. 17. It is also.
[195] First, in step S11, a desired pattern to be formed is input using a photomask. 18A and 20A each show an example of a desired pattern. The desired pattern shown in FIG. 18A is a resist removal pattern (opening part in the resist pattern), and the desired pattern shown in FIG. 20A is a resist pattern.
[196] Next, in step S12, the shape of the mask pattern is determined based on the desired pattern and the transmittance Tc of the semi-shielding portion to be used for the mask pattern is set. At this time, depending on whether the exposure condition is over exposure or under exposure, resizing is performed to enlarge or reduce the pattern for a desired pattern. 18B and 20B each show an example of a mask pattern created based on a desired pattern after resizing. The mask pattern shown in FIG. 18B includes a semi-shielding portion that surrounds an opening (transmission portion) corresponding to the desired pattern. The mask pattern shown in FIG. 20B is composed of a semi-shielding portion surrounded by a light transmitting portion.
[197] Next, in step S13, the area | region interposed in the opening part by the predetermined | prescribed size D1 or less from the mask pattern, ie, the area | region whose width | variety of the mask pattern is below the predetermined | prescribed size D1, is extracted. D1 is preferably about 0.8 x lambda / NA (lambda is a light source wavelength, NA is a numerical aperture). 18 (c) and 20 (c) show regions interposed in the opening part with a predetermined size or less in the mask pattern shown in FIGS. 18 (b) and 20 (b), respectively.
[198] In the next step S14, the phase shifter is inserted in the region extracted in the step S13 so that the centerline emphasis method is established. 18D and 20D show a phase shifter having an appropriate width inserted so that the centerline emphasis method is established in the extracted region shown in each of FIGS. 18C and 20C. Indicates.
[199] Next, in step S15, a phase shifter is inserted in the mask pattern so that the contour enhancement method is established. Specifically, FIG. 19A shows a phase in which a phase shifter is inserted in the mask pattern shown in FIG. 18D so that the outline enhancement method is established. As shown in Fig. 19A, a phase shifter of a predetermined size is inserted into an area in contact with each side of the opening (square) of the mask pattern. Here, in the mask pattern shown in Fig. 19A, phase shifter arrangement in the format shown in Fig. 9B is performed, but the phase shifter arrangement is not limited to this. FIG. 21A shows a state in which a phase shifter is inserted in the mask pattern shown in FIG. 20D so that the outline enhancement method is established. As shown in Fig. 21A, a phase shifter is inserted at the periphery of a region where the width of the mask pattern exceeds a predetermined size D1. In addition, in FIG. 21A, although the phase shifter of the type shown in FIG. 9A is arrange | positioned, phase shifter arrangement is not limited to this.
[200] By the above steps (S11) to (S15), the mask pattern which enables fine pattern formation was performed using the center line emphasis method and the outline emphasis method. Here, the mask pattern is completed by performing normal mask data creation processing such as proximity effect correction for adjusting the size of the pattern formed corresponding to the mask pattern by exposure and conversion of the mask size based on the reduction magnification value of the reduction exposure system. . However, if the MEEF is large in pattern size adjustment, the mask pattern (the minimum width that can be adjusted in size) becomes a mask pattern with a large pattern size error. Therefore, in the third embodiment, in order to further improve the mask pattern, a step of enabling the pattern size adjustment with a low MEEF in performing the proximity effect correction and reducing the pattern size adjustment error due to the mask grid is added. To be carried out.
[201] That is, in step S16, the MEEF reduction method is applied to the mask pattern to which the center line emphasis method and the contour emphasis method are applied. As described in the above-described principles of the contour enhancement method, there are a method for changing the position or size of the phase shifter and a method for changing the size of the semi-shielding portion for adjusting the pattern size. In general, the phase shifter, which is a region that transmits light in the opposite phase with respect to the light transmitting portion, has a very strong light shielding property. Therefore, even if a semi-shielding portion is added around the phase shifter, the intensity distribution of the light transmitted through the photomask is affected. Hard to receive Therefore, the method of changing the size of the semi-shielding portion is superior to the method of changing the position or size of the phase shifter in that MEEF is lowered. Thus, as the CD (pattern size) adjusting area for adjusting the pattern size, a semi-shielding portion is inserted at the boundary between the opening and the phase shifter. 19 (b) and 21 (b) show an aspect in which the CD adjustment semi-shielding portion is set for the mask pattern shown in Figs. 19 (a) and 21 (a), respectively. As shown in Fig. 19B, the opening for forming the space pattern is necessarily surrounded by the semi-shielding portion in step S16. As shown in Fig. 21B, the phase shifter in the mask pattern for forming a line pattern is necessarily surrounded by the semi-shielding portion in step S16. The semi-shielding portion disposed as the CD adjustment region around the phase shifter here preferably has a size that does not affect the light shielding property of the phase shifter. Therefore, in the third embodiment, the width of the CD adjustment region is set to 0.1 x lambda / NA or less. . In other words, it is preferable that the width of the CD adjustment region is equal to or less than 1/10 of lambda / NA, which is a magnitude that affects the interference effect of light by the phase shifter.
[202] The mask pattern created by the process from step S11 to step S16 is a mask pattern which can form a fine pattern. In the preparation of this mask pattern, when the proximity effect correction is applied, the pattern size adjustment can be realized with a low MEEF by changing the size of the semi-shielding portion surrounding the opening or the phase shifter. In other words, it is possible to realize an excellent mask pattern creation method with a low pattern size adjustment error due to the grid effect of the mask pattern.
[203] In general, however, the light intensity transferred when the mask pattern using the semi-shielding portion (i.e., the transparent shielding pattern) is exposed is not reduced simply to the inside of the mask pattern, but decreases while vibrating. The vibration in this light intensity distribution has a peak or side lobe at lambda / NA or less at the end of the mask pattern. Therefore, in the third embodiment, a step for further expanding the exposure margin is further performed so that the portion corresponding to the semi-shielding portion of the resist film is not exposed due to overexposure in exposure at the time of actual pattern formation.
[204] That is, in step S17, the side lobe reduction phase shifter is inserted into the mask pattern to which the center line enhancement method, the contour enhancement method and the MEEF reduction method are applied. Here, the side lobes that occur solely around the isolated opening pattern or the side lobes that occur inside the mask pattern are rarely a problem. However, when the openings are adjacent at a distance of about λ / NA to 2 × λ / NA, a region where the peaks of the two side lobes overlap is generated. Therefore, if the exposure is overexposed, the resist film is exposed to the light intensity of this region. It may be discarded. In the part where the width of the mask pattern is 2 x lambda / NA or less, since the two side lobe peaks overlap with each other on both sides of the mask pattern, if the exposure is overexposed, the resist film may be exposed by the light intensity of this part. . However, as described in the principle of the above-described outline enhancement method, in the mask pattern using the semi-shielding portion, if the interval between phase shifters is 0.8 × λ / NA or more, in other words, if the mask pattern width is 0.8 × λ / NA or more The phase shifter for canceling light corresponding to the residual light intensity by the semi-shielding portion can be disposed at any position. In the third embodiment, this principle is used to arrange the phase shifter in the region of 2 x lambda / NA or less, which balances the residual light intensity by the semi-shielding portion, so that the peaks of the side lobes overlap each other. All the light intensities of the region can be canceled out. Similarly, in the portion where the mask pattern width exceeds 0.8 x lambda / NA (even after the phase shifter is arranged based on the contour enhancement method), the phase shifter in balance with the residual light intensity by the semi-shielding portion is disposed, All the light intensities of the areas where the peaks overlap each other can be canceled. That is, in step S17, the overexposure margin at the time of performing exposure using the mask pattern created in steps S11 to S16 can be enlarged. FIG. 19C shows an aspect in which the side lobe reducing phase shifter is inserted in a region interposed in the opening portion at intervals of 2 x lambda / NA or less in the mask pattern shown in FIG. 19B. 21C shows an aspect in which the side lobe reduction phase shifter is inserted in a portion of the mask pattern shown in FIG. 21B exceeding 0.8 x lambda / NA (after applying the contour enhancement method). Indicates.
[205] Finally, in step S18, the mask pattern created by the process from step S11 to step S17 is output. By the steps S11 to S18 described above, the fine pattern can be formed with high precision, and the mask pattern with excellent exposure margin at the time of pattern formation can be executed. Up to this point, it is assumed that all of the light blocking portions constituting the mask pattern are semi-shielding portions, but a sufficient distance from each of the phase shifter inserted for the center line enhancement method and the opening to which the contour enhancement method is applied (that is, a distance that can ignore the interference effect of light) It is a matter of course that the region where the distance (greater than 2 x lambda / NA) is apart may be a completely light shielding portion. FIG. 19D shows an aspect in which a region sufficiently separated from the phase shifter and the opening of the mask pattern shown in FIG. 19C is set as the complete light shielding portion.
[206] As described above, according to the third embodiment, a mask pattern is formed by using a semi-shielding portion that transmits light that is weak enough not to photoresist the resist film, so that the contrast of light intensity at any position of the mask pattern can be emphasized. Shifter insertion becomes possible. However, the phase shifters to be inserted need to be separated by a predetermined size or more. As a result, the centerline emphasis method and the contour emphasis method can be applied to the formation of a resist pattern having an arbitrary opening shape. In other words, since the light intensity distribution contrast of the light shielding image corresponding to the mask pattern can be strongly emphasized by the oblique incident exposure irrespective of the density of the pattern, the isolated space pattern and the isolated line pattern or dense pattern can be formed simultaneously.
[207] According to the third embodiment, a mask pattern capable of forming a fine pattern can be realized, and a mask pattern capable of adjusting the pattern size with a low MEEF when applying proximity effect correction can be realized. In addition, since the phase shifter can be inserted at any position of the mask pattern, the occurrence of side lobes can be suppressed, so that the mask pattern can be formed with a high exposure margin at the time of pattern formation.
[208] According to the third embodiment, in the mask pattern including the semi-shielding portion and the phase shifter, the phase shifter is disposed in the portion below the predetermined width in accordance with the center line enhancement method, and the contour enhancement method is used in the portion exceeding the predetermined width. Position the phase shifter accordingly. Therefore, an image having a very high contrast can be formed at the time of exposure by a mask pattern having an arbitrary shape. Therefore, by using the photomask in which such a mask pattern was formed, exposure to the board | substrate to which the resist was apply | coated is possible to form a fine resist pattern. By exposing the photomask using oblique incidence illumination, it is possible to form a micropattern in which the variation in the pattern size hardly occurs in response to the focus variation.
[209] Fig. 22 also shows a method of inserting a phase shifter for realizing the center line emphasis method or the contour emphasis method in accordance with the line width of the mask pattern. As shown in Fig. 22, the contour emphasis method is applied to a mask pattern exceeding a predetermined line width, while the center line emphasis method is applied to a mask pattern of a predetermined line width or less. Although it is preferable to select 0.8 * (lambda) / NA as a reference | standard as a predetermined line width here, you may set it to the value below that. As shown in Fig. 22, in the center line emphasis method, the thicker the mask pattern line width, the thinner the phase shifter inserted into the mask pattern, and the thinner the mask pattern line width, the thicker the phase shifter inserted into the mask pattern. The method for obtaining the optimum size of the phase shifter line width is as described above. When the center line emphasis method is applied, the mask pattern may be formed only by the phase shifter.
[210] On the other hand, as shown in Fig. 22, the phase shifter inserts a phase shifter at the periphery of the mask pattern exceeding the predetermined line width. The phase shifter line width at this time may be a constant value in all the mask patterns without depending on the mask pattern line width unless the light passing through the phase shifter becomes excessive. That is, whether to apply the center line emphasis method or the contour emphasis method can be determined uniquely based on the line width of the mask pattern.
[211] However, due to the use of the semi-shielding portion, the side lobe phenomenon occurs remarkably in the mask pattern having a predetermined size. However, with respect to the mask pattern which is such a condition, as described above, the mask pattern can be arbitrarily inserted with the phase shifter matching the remaining light intensity by the semi-shielding portion. Thus, as shown in FIG. The side lobe reduction phase shifter may be inserted. In this case, when only the phase shifter arrangement in the mask pattern is seen, the contour emphasis method and the center line emphasis method are simultaneously applied to the same mask pattern. In the mask pattern having a size large enough to maximize the side lobe phenomenon, it is possible to arbitrarily determine whether to insert the side lobe reducing phase shifter in the center of the mask pattern. In addition, in the example shown in FIG. 22, when a mask pattern size is large enough, insertion of a side lobe reduction phase shifter is skipped.
[212] (4th Embodiment)
[213] EMBODIMENT OF THE INVENTION Hereinafter, the photomask which concerns on 4th Embodiment of this invention, and its preparation method are demonstrated, referring drawings.
[214] 23 shows a photomask according to a fourth embodiment, specifically, a mask portion for forming a line pattern for realizing the centerline emphasis method of the present invention and a mask portion for forming a contact pattern for realizing the outline emphasis method of the present invention (mask It is a top view of the photomask which has a light transmission part (opening part is enclosed) in a pattern. (A)-(f) of FIG. 24 respectively show the AA 'line sectional drawing of FIG. That is, as a method of realizing a photomask having a planar configuration as shown in Fig. 23, there are basically six types shown in Figs. 24A to 24F. However, the cross-sectional structure shown in (a)-(f) of FIG. 24 is a basic form, The photomask which has a cross-sectional structure which combined these is realizable. Hereinafter, the photomask creation method of the basic form shown to FIG. 24 (a)-(f) is demonstrated.
[215] In the form shown in FIG. 24A, a first phase shifter film 11 is formed on the mask pattern formation region of the transparent substrate 10 to transmit the exposure light in the opposite phase on the basis of the light transmitting portion. A second phase shifter film 12 is formed on the semi-shielding portion formation region of the first phase shifter film 11 so as to transmit the exposure light in the opposite phase with respect to the first phase shifter film 11. As a result, a semi-shielding portion having a laminated structure of the second phase shifter film 12 and the first phase shifter film 11 is formed, and a phase shifter having a single layer structure of the first phase shifter film 11 is formed. The semi-shielding portion formed of the laminated structure of the second phase shifter film 12 and the first phase shifter film 11 transmits the exposure light in phase with respect to the light transmitting portion. That is, in the form shown in Fig. 24A, a desired mask pattern composed of the phase shifter and the semi-shielding portion is realized by processing the laminated film of the phase shifter film which inverts the phase of the transmitted light based on the light passing through the light transmitting portion. do. Moreover, the semi-shielding part which has a transmittance which permeate | transmits a part of exposure light is implement | achieved by the laminated | multilayer film of a phase shifter film.
[216] In the form shown in FIG. 24 (b), the semi-shielding film has a transmittance for transmitting a part of the exposure light on the semi-shielding portion forming region of the transparent substrate 20 and transmits the exposure light in phase with respect to the light transmitting portion ( 21) is formed. That is, the semi-shielding portion formed of the semi-shielding film 21 is formed. Further, by setting the phase shifter formation region of the transparent substrate 20 by a predetermined thickness, a phase shifter is formed which transmits the exposure light in the opposite phase with respect to the light transmitting portion. That is, in the form shown in FIG. 24 (b), a desired mask composed of a semi-shielding portion and a phase shifter is formed by combining the semi-shielding film 21 which hardly generates a phase difference compared to the transmissive portion and the stepped portion of the transparent substrate 20. The pattern is realized.
[217] In the form shown in FIG. 24C, a phase shifter film 31 is formed on the semi-shielding portion forming region of the transparent substrate 30 to transmit exposure light in the opposite phase with respect to the phase shifter. In addition, the light-transmitting portion forming region of the transparent substrate 30 is lowered by a predetermined thickness to generate a step, thereby forming a light-transmitting portion for transmitting the exposure light in the opposite phase with respect to the phase shifter. That is, in the form shown in (c) of FIG. 24, the portion defined by the light transmitting portion is replaced with the phase shifter having high transmittance, the portion defined by the phase shifter is replaced by the light transmitting portion, and the portion defined by the semi-shielding portion is the exposure light. A phase shifter having a transmittance that transmits a portion thereof and a substituted photomask are realized. At this time, the relative phase difference relationship between the components of the photomask shown in Fig. 24C is different from those shown in Figs. 24A, 24B, and 24D and 24F, respectively. Same as the photomask in the form.
[218] In the form shown in FIG. 24D, a thinned light shielding film having a transmittance for transmitting a portion of the exposure light on the semi-shielding portion forming region of the transparent substrate 40 and transmitting the exposure light in phase with respect to the light transmitting portion ( 41) is formed. That is, the semi-shielding part which consists of the light shielding film 41 is formed. In addition, the phase shifter forming region of the transparent substrate 40 is lowered by a predetermined thickness so that a phase shifter for transmitting the exposure light in the opposite phase is formed based on the light transmitting portion. Here, even when the ordinary metal film is thinned, the light shielding film 41 having a transmittance for transmitting a part of the exposure light can be formed. The light transmitted through the light shielding film 41 has a slight phase change since the light shielding film 41 is thinned. If the phase of the light passing through the semi-shielding portion has a phase difference with respect to the light passing through the light-transmitting portion, the focal position is slightly shifted on the light formed by the mask pattern using the semi-shielding portion. However, if this phase difference is about 30 degrees, there is no influence on the shift of the focus position. Therefore, by using a thin metal film or the like as the light shielding film 41, it is possible to realize a semi-light shielding portion that weakly transmits light having substantially the same phase relative to the light transmitting portion. That is, in the format shown to FIG. 24D, the effect similar to the format shown to FIG. 24B is acquired. In addition, the thinned light shielding film can be substituted as the semi-shielding film which hardly generates a phase difference compared with the light-transmitting portion, so that a desired mask pattern composed of the phase shifter and the semi-shielding portion can be easily realized without using a transparent thick film for phase control.
[219] In the form shown in FIG. 24E, a semi-shielding film having a transmittance for transmitting a part of the exposure light on the mask pattern formation region of the transparent substrate 50 and transmitting the exposure light in phase with respect to the light transmitting portion ( 51) is formed. Further, the phase shifter formation region of the semi-shielding film 51 is lowered by a predetermined thickness so that a phase shifter for transmitting the exposure light in the opposite phase is formed based on the light transmitting portion. In other words, a semi-shielding portion made of the non-stepped portion of the semi-shielding film 51 is formed, and a phase shifter made of the stepped portion of the semi-shielding film 51 is formed. That is, in the form shown in Fig. 24E, the phase shifter and the semi-shielding portion are created by using a step portion of the semi-shielding film 51 to create a phase shifter which inverts the phase of the light transmitted based on the light passing through the light-transmitting portion. The desired mask pattern constituted by is realized.
[220] In the form shown in FIG. 24 (f), a semi-shielding film having a transmittance for transmitting a part of the exposure light on the mask pattern formation region in the transparent substrate 60 and for transmitting the exposure light in phase with respect to the light transmitting portion ( 61) is formed. Further, a phase shifter film 62 is formed on the phase shifter formation region of the semi-shielding film 61 to transmit the exposure light in an inverted phase on the basis of the light transmitting portion. As a result, a semi-shielding portion having a single layer structure of the semi-shielding film 61 is formed, and a phase shifter composed of a laminated structure of the semi-shielding film 61 and the phase shifter film 62 is formed. That is, in the form shown in FIG. 24 (f), by laminating the phase shifter film 62 on the semi-shielding film 61, a desired mask pattern composed of the phase shifter and the semi-shielding portion is realized.
[221] (5th Embodiment)
[222] EMBODIMENT OF THE INVENTION Hereinafter, the pattern formation method which concerns on the 5th Embodiment of this invention, specifically, the pattern formation method using the photomask (hereinafter, the photomask of this invention) which concerns on any one of 1st-4th embodiment is referred to drawing. Explain. As described above, the micropattern can be formed by performing exposure using the photomask of the present invention, that is, the photomask created to achieve the contour enhancement method or the center line enhancement method. For example, when exposing the photomask as shown in FIG. 23 to reduce the transfer of the pattern on the wafer, as described in the principle of the outline enhancement method and the principle of the center line enhancement method, a mask portion for realizing the outline enhancement method Incidental incident exposure is also performed on the mask portion (image enhancement mask) that realizes the centerline enhancement method for the (contour emphasis mask), thereby forming an image with high contrast. In this way, it is possible to realize pattern formation in which the pattern dimension is hard to fluctuate with respect to focal variation.
[223] 25 (a) to 25 (d) are cross-sectional views showing respective steps of the pattern forming method using the photomask of the present invention.
[224] First, as shown in FIG. 25A, a to-be-processed film 101 such as a metal film or an insulating film is formed on the substrate 100, and then as shown in FIG. 25B, the to-be-processed film 101 is formed. The positive resist film 102 is formed on the
[225] Next, as shown in Fig. 25C, the photomask of the present invention, for example, a photomask of the type shown in Fig. 24A (however, in Fig. 25C, a mask portion for forming a contact pattern) Only the exposure light 103 is irradiated, and the resist film 102 is exposed by the transmitted light 104 transmitted through the photomask. In addition, on the transparent substrate 10 of the photomask used in the process shown in FIG. 25C, the semi-shielding portion which consists of a laminated structure of the 1st phase shifter film 11 and the 2nd phase shifter film 12, and a 1st phase A mask pattern composed of a phase shifter having a single layer structure of the shifter film 11 is formed. This mask pattern surrounds the opening (transmission part) corresponding to a desired pattern (resist removal pattern). That is, in the exposure process shown in Fig. 25C, the resist film 102 is exposed to light using an inclined incident exposure light source through a photomask for realizing this contour enhancement method. At this time, since the semi-shielding portion having a low transmittance is used for the mask pattern, the entire resist film 102 is exposed with weak energy. However, as shown in Fig. 25C, the exposure energy sufficient to dissolve the resist in the developing step is irradiated with the latent image portion 102a corresponding to the opening of the photomask in the resist film 102. It is only.
[226] Next, as shown in FIG. 25D, the resist film 102 is developed to remove the latent image portion 102a to form a resist pattern 105. At this time, in the exposure step shown in Fig. 25C, since the light intensity distribution contrast between the opening portion and the region surrounding the portion is high, the energy distribution between the latent image portion 102a and the region surrounding the portion also changes rapidly, and thus a sharp shape A resist pattern 105 is formed.
[227] As described above, according to the fifth embodiment, the photomask of the present invention having the mask pattern composed of the semi-shielding portion and the phase shifter is used for pattern formation. Here, the phase shifter is arranged in the vicinity of the transmissive portion of the photomask according to the contour enhancement method, and the phase shifter is disposed in the region of the mask pattern interposed on the transmissive portion by a predetermined size or less according to the center line enhancement method. Therefore, the light intensity distribution contrast of the periphery of the light transmitting portion or the small width portion of the mask pattern can be strongly emphasized by the oblique incident exposure regardless of the density of the pattern. Therefore, by using the photomask of the present invention, the resist-coated substrate is exposed to form a fine resist pattern. Further, by exposing the photomask using oblique incidence illumination, it is possible to form a micropattern in which the variation in the pattern size is less likely to occur with respect to the focus variation.
[228] In the fifth embodiment, the case where the exposure using the photomask on which the contour enhancement method is established is described as a positive resist process has been described as an example. Of course, the present invention is not limited to this. That is, exposure using the photomask in which the center line emphasis method is established or the photomask in which the contour emphasis method and the center line emphasis method are established may be performed in a positive resist process. Alternatively, exposure using a photomask in which at least one of the contour emphasis method and the center line emphasis method is established may be performed in a negative resist process. In the case where the positive resist process is used, a resist pattern in the form of a mask pattern can be formed by developing a positive resist film irradiated with exposure light and removing portions other than those corresponding to the mask pattern of the positive resist film. . In the case of using a negative resist process, a negative resist film irradiated with exposure light is developed to remove a portion corresponding to the mask pattern of the negative resist film, thereby forming a resist pattern having an opening having a mask pattern shape.
[229] (6th Embodiment)
[230] EMBODIMENT OF THE INVENTION Hereinafter, the photomask which concerns on 6th Embodiment of this invention, and its mask data creation method is demonstrated, referring drawings. In the mask data creation method described below, a predetermined shape portion which is likely to deform the pattern shape during pattern transfer is extracted from the mask pattern into which the phase shifter is inserted by the center line emphasis method or the outline emphasis method of the present invention. Then, the phase shifter is inserted, deformed, or erased so that the shaped portion has a desired shape. That is, by performing the mask data creation method of the present embodiment in combination with, for example, the mask data creation method according to the third embodiment, pattern formation having a desired shape can be achieved in addition to miniaturization of the pattern line width or pattern interval.
[231] Specifically, there is an end portion of a line pattern thinner than a predetermined size, for example, as shown in Fig. 26A as a shape portion where the pattern shape is easily deformed during pattern transfer. Usually, the end portion of the mask pattern corresponding to such a line pattern has a bad light shielding effect, so that the line length is reduced when the pattern is formed. This is a phenomenon called retreat of the line end. For such a phenomenon that the end of the line retreats, the length of the mask pattern may be simply increased to compensate for deformation. In addition, there is a method of making the line length of the mask pattern thicker as another method of stabilizing the exposure dose fluctuation or the focal fluctuation in the line length at the time of pattern formation. This method is usually carried out in a method using a mask pattern made of a completely light shielding film, and a shape having a thick line end is called a hammer head pattern. According to the centerline emphasis method of the present invention, the light shielding effect can be improved by inserting a larger phase shifter in a portion where the light shielding effect of the mask pattern is reduced. In other words, by using a thicker phase shifter at the end of the line where the light shielding effect deteriorates from the center of the line in the mask pattern, high light shielding can be realized. Therefore, as shown in Fig. 26A, the end of the line may be deformed into a hammerhead pattern composed of a phase shifter.
[232] Instead of the deformation compensation method shown in Fig. 26A, the contour enhancement method can be applied to the end of the line as shown in Fig. 26B as a more general deformation compensation method. Specifically, a phase shifter is disposed in a peripheral portion parallel to the line direction in a region within a predetermined distance from both ends of the mask pattern for forming the line pattern. In this case, when the line pattern is isolated, the characteristic of the line end becomes almost the same as that of the hammer head pattern.
[233] However, according to the method shown in FIG. 26 (b), when the end of the line pattern is present in close proximity to another pattern, there is a particular effect in reducing the MEEF especially in forming the space between the two patterns, whereby a fatal pattern deformation such as a pattern bridge is provided. A very good effect can be obtained to prevent this. Hereinafter, the deformation compensation method when the end of the line pattern is close to the other pattern will be described.
[234] First, as shown in Fig. 26C, when the ends of the line patterns are close to each other, the end of each line of the mask pattern for forming each line pattern is modified. In such a case, it is necessary to perform pattern formation so that the line ends are not bridged and the space between the line ends is minimized. By using the deformation compensation method shown in Fig. 26C of the present invention, the MEEF value of the same target pattern size is greatly reduced.
[235] Next, as shown in (d) of FIG. 26, when one line pattern end is close to another line pattern that is thin enough to apply the center line emphasis method, the line ends in one mask pattern for forming one line pattern. The modification method of is the same as that of FIG. On the other hand, for another mask pattern for forming another line pattern, a phase shifter disposed within a predetermined size at one end of one mask pattern in the vicinity of one mask pattern is changed to a semi-shielding portion. At this time, only the vicinity of one mask pattern in the phase shifter inserted on the center line of the other mask pattern may be moved to the opposite end of one mask pattern. In the case shown in Fig. 26D, the predetermined portion of the phase shifter is changed to the semi-shielding portion. In this case, as a result, the width of the phase shifter is reduced. By using the deformation compensation method shown in FIG. 26 (d) of the present invention, the MEEF value of the same target pattern size is greatly reduced.
[236] Next, as shown in Fig. 26E, when the end of one line pattern and another line pattern that is thick enough to apply the contour emphasis method are close to each other, one mask pattern for forming one line pattern is formed. The method of forming the end of the line is similar to that of FIG. On the other hand, for another mask pattern for forming another line pattern, the phase shifter disposed in the vicinity of one mask pattern is changed to a semi-shielding portion. At this time, in another mask pattern, the phase shifter disposed in the vicinity of one mask pattern may be moved further inward. In the case shown in Fig. 26E, a predetermined portion of the phase shifter is moved further inward in another mask pattern, and the effect in this case is substantially the same as when the predetermined portion of the phase shifter is changed to a semi-shielding portion. Do. By using the deformation compensation method shown in Fig. 26E of the present invention, the MEEF value of the same target pattern size is greatly reduced.
[237] As described above, when the pattern is formed by using the mask pattern to which the deformation compensation method of the present embodiment shown in Figs. 26A to 26E is applied, the MEEF is greatly reduced. Since a margin can be made small, a finer pattern can be formed.
[238] Here, an L-shape composed of lines which are thin enough to be subjected to the center line emphasis method as shown in FIG. 27A, for example, as shown in FIG. There is a corner pattern. As the deformation compensation method in this case, as shown in Fig. 27A, the center shift emphasis phase shifter is located in a region within a predetermined size from the bending point of the L-shaped corner (where the contour of the mask pattern is bent) in the mask pattern. Instead, place a semi-shielding portion. At this time, the size of the center line emphasis phase shifter in this area may be reduced. In addition, you may arrange a phase shifter for corner emphasis on the outer periphery of the L-shaped corner of the mask pattern. The phase shifting phase shifter looks the same as the phase shifting phase shifter, but the corner shifting phase shifter is disposed slightly outward from the position where the phase shifting phase shifter is originally arranged. On the other hand, in the case of an L-shaped corner pattern composed of lines that are thick enough to apply the contour emphasis method as shown in FIG. 27 (b), the phase shifter for contour emphasis is placed in a region within a predetermined size from the inner bending point of the L-shaped corner of the mask pattern periphery. Instead, the semi-shielding portion is disposed. At this time, the size of the phase shifter for contour enhancement in this area may be reduced. The above-mentioned corner emphasis phase shifter may be disposed in the region of the mask pattern peripheral portion within a predetermined size from the outer bending point of the L-shaped corner instead of the contour emphasis phase shifter.
[239] The deformation compensation method shown in Figs. 27A and 27B eliminates the emphasis pattern (phase shifter) inside the corner with strong light shielding effect in the mask pattern, and at the same time the corner outside the corner with weak light shielding effect in the mask pattern. This is to modify the emphasis pattern on the page. By the deformation | transformation compensation method of this embodiment shown to FIG. 27 (a) and FIG. 27 (b), the shape near the target pattern shape is obtained. The reason is that the light shielding balance is improved because the phase shifter is removed from the corner portion where the light shielding property of the mask pattern is excessive.
[240] As another example of the shape portion where the pattern shape is likely to deform during pattern transfer, there is a T-shaped corner pattern composed of lines that are thin enough to apply the centerline enhancement method, for example, as shown in Fig. 27C. In the deformation compensation method in this case, as shown in Fig. 27C, the semi-shielding portion is disposed in place of the center line emphasis phase shifter in a region within a predetermined size from the T-shaped corner bending point of the mask pattern. At this time, the size of the center line emphasis phase shifter in this area may be reduced. The contour emphasis phase shifter may be arranged on the opposite side of the branch of the T-shaped corner of the mask pattern. On the other hand, in the case of a T-shaped corner pattern composed of lines that are thick enough to apply the contour emphasis method as shown in FIG. 27 (d), the phase shifter for contour emphasis is placed in a region within a predetermined size from the bending point of the T-shaped corner at the periphery of the mask pattern. Instead, the semi-shielding portion is disposed. At this time, the size of the phase emphasis phase shifter in this area may be reduced. A corner emphasis phase shifter may be disposed on the opposite side of the branch of the T-shaped corner of the mask pattern instead of the phase emphasis phase shifter.
[241] In the deformation compensation method shown in FIGS. 27C and 27D, the enhancement pattern inside the corner with strong light shielding effect in the mask pattern is erased, and the enhancement pattern outside the corner with light shielding effect in the mask pattern is weak. To transform. By the deformation | transformation compensation method of this embodiment shown to FIG. 27 (c) and FIG. 27 (d), the shape near the target pattern shape is obtained. The reason is that the light shielding balance is improved because the phase shifter is removed from the corner portion where the light shielding property of the mask pattern is excessive.
[242] As another example of the shape portion where the pattern shape is easily deformed during pattern transfer, there is a cross-shaped corner pattern composed of lines that are thin enough to apply the center line enhancement method, for example, as shown in Fig. 27E. In the deformation compensation method in this case, as shown in Fig. 27E, the semi-shielding portion is disposed in place of the center line emphasis phase shifter in a region within a predetermined size from the cross-shaped corner bending point of the mask pattern. At this time, the size of the center line emphasis phase shifter in this area may be reduced. On the other hand, in the case of the cross-shaped corner pattern composed of lines that are thick enough to apply the contour emphasis method as shown in Fig. 27 (f), the phase shifter for contour emphasis is placed in a region within a predetermined size from the bending point of the cross-shaped corner around the mask pattern. Instead, the semi-shielding portion is disposed. At this time, the size of the phase emphasis phase shifter in this area may be reduced.
[243] In the deformation compensation method shown in FIGS. 27E and 27F, the emphasis pattern inside the corner with strong light shielding effect in the mask pattern is erased. By the deformation | transformation compensation method of this embodiment shown to FIG. 27E and FIG. 27F, the shape near the target pattern shape is obtained. The reason is that the light shielding balance is improved because the phase shifter is removed from the corner portion where the light shielding property of the mask pattern is excessive.
[244] As described above, according to the sixth embodiment, in the mask pattern including the semi-shielding portion and the phase shifter, the phase shifter is disposed in the portion having a predetermined width or less and according to the centerline enhancement method, and in the portion exceeding the predetermined width. Place the phase shifter according to the contour emphasis method. Thereby, the mask pattern of arbitrary shape can form the image with very high contrast at the time of exposure. Accordingly, by exposing a substrate coated with a resist using a photomask having such a mask pattern formed thereon, a fine resist pattern can be formed. Further, by exposing the photomask using oblique incidence illumination, it is possible to form a micropattern in which the variation in the pattern size is less likely to occur with respect to the focus variation.
[245] According to the sixth embodiment, the light shielding effect can be reduced by using the semi-shielding portion even in a portion where the shielding effect becomes excessively strong in the normal full shielding pattern, such as the inside of the corner portion in the mask pattern. In other words, if the light shielding effect emphasis phase shifter is not simply inserted into the portion where the light shielding effect of the mask pattern is excessive, the unnecessary light shielding effect can be prevented. Therefore, by restricting the phase shifter insertion using this effect, an arbitrary shape pattern can be easily created in the desired shape.
[246] In the sixth embodiment, the exposure using the photomask in which the contour emphasis method or the center line emphasis method is established is described using an example of a positive resist process, but the present invention is, of course, not limited thereto. In other words, exposure using a photomask in which at least one of the outline enhancement method and the center line enhancement method is established may be performed in a positive resist process. Alternatively, exposure using a photomask in which at least one of the outline emphasis method and the center line emphasis method is established may be performed in a negative resist process. In the case where the positive resist process is used, a resist pattern in the form of a mask pattern can be formed by developing a positive resist film irradiated with exposure light and removing portions other than those corresponding to the mask pattern of the positive resist film. . In the case of using a negative resist process, a negative resist film irradiated with exposure light is developed to remove a portion corresponding to the mask pattern of the negative resist film, thereby forming a resist pattern having an opening having a mask pattern shape.

权利要求:
Claims (39)
[1" claim-type="Currently amended] A photomask having a mask pattern having light shielding property against the exposure light and a light transmitting portion having no mask pattern formed on the transparent substrate, on a transparent substrate having light transparency to exposure light;
The mask pattern,
A semi-shielding portion for transmitting the exposure light in phase with respect to the light-transmitting portion;
It consists of a phase shifter for transmitting the exposure light in the opposite phase with respect to the light transmitting portion,
The semi-shielding portion has a transmittance for partially transmitting the exposure light,
And the phase shifter is formed at a position capable of erasing part of the light transmitted through the light transmitting portion and the semi-shielding portion by light transmitted through the phase shifter.
[2" claim-type="Currently amended] The method of claim 1,
The transmittance of the semi-shielding portion with respect to the exposure light is 15% or less.
[3" claim-type="Currently amended] The method of claim 1,
The photomask of the said semi-shielding part with respect to said exposure light is 6% or more and 15% or less.
[4" claim-type="Currently amended] The method of claim 1,
The semi-shielding portion transmits the exposure light based on the light transmitting portion with a phase difference of (-30 + 360 × n) degrees or more and (30 + 360 × n) degrees or less (where n is an integer). The phase shifter transmits the exposure light with a phase difference of (150 + 360 × n) degrees or more and (210 + 360 × n) degrees or less (where n is an integer) based on the light transmitting portion. .
[5" claim-type="Currently amended] The method of claim 1,
The phase shifter is disposed at a portion of (0.8 x lambda / NA) x M or less from the boundary of the mask pattern with the light transmitting portion (where, Is a wavelength of the exposure light, NA and M is the numerical aperture and the reduction factor of the exposure machine reduction projection optical system, respectively).
[6" claim-type="Currently amended] The method of claim 1,
The width of the phase shifter is (0.3 x lambda / NA) x M or less (wherein lambda is the wavelength of the exposure light, NA and M are the numerical aperture and reduction magnification of the exposure machine reduction projection optical system, respectively) .
[7" claim-type="Currently amended] The method of claim 1,
The mask pattern is formed to surround the light transmitting portion,
And the phase shifter is disposed to be interposed by the semi-shielding portion and the light-transmitting portion in the vicinity of the light-transmitting portion of the mask pattern.
[8" claim-type="Currently amended] The method of claim 1,
The mask pattern is formed to surround the light transmitting portion,
And the phase shifter is arranged to be surrounded by the semi-shielding portion in the vicinity of the light transmitting portion of the mask pattern.
[9" claim-type="Currently amended] The method of claim 1,
The mask pattern is surrounded by the light transmitting portion,
The phase shifter is surrounded by the semi-shielding portion.
[10" claim-type="Currently amended] The method of claim 9,
The photomask is characterized in that the width of the mask pattern is (0.8 × λ / NA) × M or less (where λ is the wavelength of the exposure light, NA and M are the numerical aperture and the reduction magnification of the exposure machine reduction projection optical system, respectively)
[11" claim-type="Currently amended] The method of claim 10,
The width of the phase shifter is (0.4 × λ / NA) × M or less photomask.
[12" claim-type="Currently amended] The method of claim 1,
The mask pattern is a line-shaped pattern surrounded by the light transmitting portion,
And the phase shifter is disposed so as to be interposed by the semi-shielding portion at a central portion of a line width direction of the mask pattern.
[13" claim-type="Currently amended] The method of claim 12,
The photomask is characterized in that the width of the mask pattern is (0.8 × λ / NA) × M or less (where λ is the wavelength of the exposure light, NA and M are the numerical aperture and the reduction magnification of the exposure machine reduction projection optical system, respectively) .
[14" claim-type="Currently amended] The method of claim 13,
The width of the phase shifter is (0.4 × λ / NA) × M or less photomask.
[15" claim-type="Currently amended] The method of claim 1,
The mask pattern is a line-shaped pattern surrounded by the light transmitting portion,
And the phase shifter is disposed at least at both ends of the mask pattern in the line width direction so as to interpose the semi-shielding portion.
[16" claim-type="Currently amended] The method of claim 1,
The mask pattern is a line pattern surrounded by the light transmitting portion,
The phase shifter is disposed so as to interpose the semi-shielding portion at both end portions and a central portion of the mask pattern in the line width direction.
[17" claim-type="Currently amended] The method of claim 16,
The mask pattern has a width of (λ / NA) × M or less, wherein λ is a wavelength of the exposure light, and NA and M are numerical apertures and reduction magnifications of the exposure machine reduction projection optical system, respectively.
[18" claim-type="Currently amended] The method of claim 17,
The width of the phase shifter is (0.3 x lambda / NA) x M or less, the photomask.
[19" claim-type="Currently amended] The method of claim 1,
The mask pattern is a line pattern surrounded by the light transmitting portion,
The phase shifter is disposed at both ends in the line width direction of the mask pattern so as to be surrounded by the semi-shielding portion.
[20" claim-type="Currently amended] The method of claim 1,
The mask pattern is a line pattern surrounded by the light transmitting portion,
The phase shifter is disposed so as to be surrounded by the semi-shielding portion at both end portions and a central portion of the mask pattern in the line width direction.
[21" claim-type="Currently amended] The method of claim 1,
The light transmitting portion has a first light transmitting portion and a second light transmitting portion,
The mask pattern is disposed to surround the first light transmitting portion and the second light transmitting portion,
The phase shifter is disposed at a central portion between the first light transmitting portion and the second light transmitting portion,
The semi-shielding portion is disposed on both sides of the phase shifter.
[22" claim-type="Currently amended] The method of claim 21,
The photomask is characterized in that the interval between the first and second light-transmitting portions is (0.8 x lambda / NA) x M or less (wherein lambda is the wavelength of the exposure light, and NA and M are each of the exposure machine reduction projection optical system). Numerical aperture and reduction factor).
[23" claim-type="Currently amended] The method of claim 22,
The width of the phase shifter is (0.4 × λ / NA) × M or less photomask.
[24" claim-type="Currently amended] The pattern forming method using the photomask of claim 1,
Forming a resist film on the substrate;
Irradiating the exposure film to the resist film through the photomask;
And forming a resist pattern by developing the resist film irradiated with the exposure light.
[25" claim-type="Currently amended] The method of claim 24,
And a diagonal incidence illumination method in the step of irradiating the exposure light.
[26" claim-type="Currently amended] A method of creating mask data for a photomask according to claim 1,
A first step of determining a shape of the mask pattern based on a pattern to be formed using the photomask and setting a transmittance of the semi-shielding portion;
A second step of extracting a region interposed between the light transmitting parts to a predetermined size or less of a mask pattern after the first step;
And a third step of inserting the phase shifter in the vicinity of the light transmitting portion in the extracted region and the mask pattern after the second step.
[27" claim-type="Currently amended] The method of claim 26,
After the third process,
And inserting the semi-shielding portion having a predetermined size or less between the phase shifter and the light transmitting portion.
[28" claim-type="Currently amended] The method of claim 26,
After the third process,
And a step of inserting another phase shifter for transmitting the exposure light in an opposite phase with respect to the light transmitting portion to a region interposed in the light transmitting portion below a predetermined size in the mask pattern. Way.
[29" claim-type="Currently amended] The method of claim 28,
The other phase shifter transmits the exposure light with a phase difference of (150 + 360 × n) degrees or more and (210 + 360 × n) degrees or less (where n is an integer) based on the light transmitting portion. How to create mask data.
[30" claim-type="Currently amended] The method of claim 26,
After the third process,
And extracting a line-shaped pattern end portion having a width less than or equal to a predetermined size from the mask pattern, and inserting another phase shifter in a peripheral portion parallel to the line direction at the extracted pattern end portion. How to write data.
[31" claim-type="Currently amended] The method of claim 26,
After the third process,
When the phase shifter is extracted from the mask pattern and the phase shifter is disposed in a region within a predetermined size from the bending point of the extracted corner in the mask pattern, the phase shifter is replaced with the semi-shielding portion or the phase shifter. And a step of reducing the size of the mask data.
[32" claim-type="Currently amended] The method of claim 26,
After the third process,
And correcting the size of the semi-shielding portion in a state where the size of the phase shifter is fixed so that the pattern to be formed by using the photomask has a desired size.
[33" claim-type="Currently amended] A method of creating mask data for a photomask according to claim 1,
A first step of determining a shape of the mask pattern based on a pattern to be formed using the photomask and setting a transmittance of the semi-shielding portion;
A second step of extracting a region having a width of the mask pattern less than or equal to a predetermined size after the first step;
And a third step of inserting the phase shifter at the periphery of the extracted area and the area where the width of the mask pattern exceeds the predetermined size after the second step.
[34" claim-type="Currently amended] The method of claim 33, wherein
After the third process,
And inserting the semi-shielding portion having a predetermined size or less between the phase shifter and the light transmitting portion.
[35" claim-type="Currently amended] The method of claim 33, wherein
After the third process,
And inserting another phase shifter for transmitting the exposure light in an opposite phase with respect to the light transmitting portion in a region where the width of the mask pattern exceeds a predetermined size.
[36" claim-type="Currently amended] 36. The method of claim 35 wherein
The other phase shifter transmits the exposure light with a phase difference of (150 + 360 × n) degrees or more and (210 + 360 × n) degrees or less (where n is an integer) based on the light transmitting portion. How to create mask data.
[37" claim-type="Currently amended] The method of claim 33, wherein
After the third process,
And extracting a line-shaped pattern end portion having a width less than or equal to a predetermined size from the mask pattern, and inserting another phase shifter in a peripheral portion parallel to the line direction at the extracted pattern end portion. How to write data.
[38" claim-type="Currently amended] The method of claim 33, wherein
After the third process,
When the corner is extracted from the mask pattern, and the phase shifter is disposed in a region within a predetermined size from the bending point of the extracted corner in the mask pattern, the phase shifter is replaced with the semi-shielding portion or the phase shifter And a step of reducing the size.
[39" claim-type="Currently amended] The method of claim 33, wherein
After the third process,
And correcting the size of the semi-shielding portion in a state where the size of the phase shifter is fixed so that the pattern to be formed by using the photomask has a desired size.

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同族专利:

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公开号 | 公开日

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KR100568403B1|2006-04-05|

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US7060398B2|2006-06-13|

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TW200303448A|2003-09-01|

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KR20060002043A|2006-01-06|

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US20060183034A1|2006-08-17|

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US20060183032A1|2006-08-17|

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JPWO2003062923A1|2005-05-26|

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KR20060002042A|2006-01-06|

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KR100568406B1|2006-04-05|

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US20060183033A1|2006-08-17|

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US7449285B2|2008-11-11|

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KR100626937B1|2006-09-20|

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WO2003062923A1|2003-07-31|

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US7501213B2|2009-03-10|

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US7378198B2|2008-05-27|

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JP3984593B2|2007-10-03|

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CN100373258C|2008-03-05|

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TW576946B|2004-02-21|

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CN1633625A|2005-06-29|

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KR100573048B1|2006-04-26|

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EP1408373A1|2004-04-14|

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KR20060002041A|2006-01-06|

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US20040121244A1|2004-06-24|

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EP1408373A4|2012-01-25|

引用文献:

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公开号 | 申请日 | 公开日 | 申请人 | 专利标题

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法律状态:
2001-12-26|Priority to JPJP-P-2001-00393289

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2001-12-26|Priority to JP2001393289

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2002-12-24|Application filed by 마츠시타 덴끼 산교 가부시키가이샤

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2002-12-24|Priority to PCT/JP2002/013466

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2004-04-08|Publication of KR20040030061A

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2006-04-05|Application granted

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2006-04-05|Publication of KR100568403B1

优先权:

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申请号 | 申请日 | 专利标题

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JPJP-P-2001-00393289|2001-12-26|

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JP2001393289|2001-12-26|

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PCT/JP2002/013466|WO2003062923A1|2001-12-26|2002-12-24|Photomask, method of producing it and pattern froming method using the photomask|